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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA715 DESCRIPTION *Good Linearity of hFE *High Collector-Emitter Breakdown VoltageV(BR)CEO= -35V (Min) *Complement to Type 2SC1162 APPLICATIONS *Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 -3.0 A 0.75 W PC Total Power Dissipation @ TC=25 TJ Junction Temperature 10 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA715 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= -35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1.5A ; VCE= -2V -1.5 V ICBO Collector Cutoff Current VCB= -35V; IE= 0 -20 A hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 60 320 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 20 fT Current-Gain--Bandwidth Product IC= -0.2A ; VCE= -2V 160 MHz hFE-1 Classifications B 60-120 C 100-200 D 160-320 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA715
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