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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION *With TO-66 package *Low collector saturation voltage *Complement to type 2SC1444 APPLICATIONS *Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -6 40 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA764 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 A IEBO Emitter cut-off current VEB=-6V; IC=0 -10 A hFE DC current gain IC=-1A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 10 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA764 Fig.2 outline dimensions 3 |
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