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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1315 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector dissipation SEM GE Open base Ta=25ae OND IC TOR UC MAX -120 -120 -5 -8 3.5 UNIT V V V A Open collector PC W TC=25ae 65 150 -55~150 ae ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 60 65 MIN -120 -5 2SB1315 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V -1.5 -2.0 -50 -50 320 |I |I V V A A IN Collector output capacitance ANG CH EMIC ES OND TOR UC 200 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1315 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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