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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current (DC) Total power dissipation SEM GE Open base Ta=25ae OND IC TOR UC VALUE -100 -80 -5 -0.8 1.0 UNIT V V V A Open collector PD W TC=25ae 10 150 -55~150 ae ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=-10mA ;IB=0 IE=-50|I A ;IC=0 MIN -80 -5 TYP. 2SB548 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V V IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-0.1A ; VCE=-5V 40 25 -2.0 -1.5 -1.0 -1.0 320 |I |I V V A A IN Transition frequency ANG CH EMIC ES OND TOR UC 70 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB548 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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