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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION With TO-3 package Complement to type 2SD427 High power dissipation APPLICATIONS Power amplifier applications Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current SEM GE Open emitter Open base CONDITIONS OND IC TOR UC VALUE -120 -120 -5 -8 8 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB557 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain hFE-2 DC current gain IC=-1A ; VCE=-5V 40 140 IC=-5A ; VCE=-5V COB Output capacitance fT Transition frequency hFE-1 Classifications R 40-80 O 70-140 HAN INC SEM GE IE=0 ; VCB=-10V;f=1.0MHz OND IC 20 TOR UC 280 7 pF IC=-1A ; VCE=-5V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB557 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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