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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg HAN C PARAMETER IN Collector-base voltage SEM GE OND IC CONDITIONS TOR UC VALUE -100 -80 -5 -4 UNIT V V V A W ae ae Open emitter Collector-emitter voltage Open base Open collector Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A ,IB=-6mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -80 TYP. 2SB676 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.5 -2.0 -20 -2.5 |I V V A mA Switching times ton ts tf Turn-on time Storage time Fall time ANG CH IN EMIC ES VCE=-30V, IB1=-IB2=-6mA RL=10| OND TOR UC 0.15 |I 0.80 0.40 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB676 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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