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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS 2SC1079 2SC1080 VCEO VEBO IC IE PC Tj Tstg INCH Emitter current Collector-emitter voltage ANG 2SC1079 EMIC ES Open emitter Open base Open collector DUC ON VALUE 120 TOR UNIT V 100 120 V 100 5 12 -12 V A A W ae ae 2SC1080 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC1079 V(BR)CEO Collector-emitter breakdown voltage 2SC1080 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain IE=10mA ;IC=0 IC=10A; IB=1A IC=10A ; VCE=5V VCB=50V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=2A ; VCE=5V IC=0.1A ;IB=0 CONDITIONS 2SC1079 2SC1080 SYMBOL MIN 120 TYP. MAX UNIT V 100 5 3.0 2.5 0.1 0.1 40 140 V V V mA mA DC current gain Y Transition frequency hFE-1 Classifications R 40-80 HAN INC 70-140 SEM GE OND IC 15 TOR UC 4 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1079 2SC1080 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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