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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG SEM E Open base Tmb=25ae Open emitter OND IC TOR UC VALUE 450 400 5 15 30 6 100 200 -65~200 UNIT V V V A A A W ae ae Open collector Collector current-peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=6A; IB=1.2A IC=6A ;IB=1.2A VCB=450V; IE=0 TC=125ae VCE=400V; IB=0 VEB=5V; IC=0 IC=6A ; VCE=5V 10 MIN 400 2SC2246 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE TYP. MAX UNIT V 1.2 1.5 1 4 5.0 1.0 V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time ANG CH IN EMIC ES IC=6A ;IB1=- IB2=1.2A OND TOR UC 1.0 |I 2.0 1.0 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2246 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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