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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2305
DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg

PARAMETER
CHA IN
Base current (DC)
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE 400 400 8 7 14 3
UNIT V V V A A A W ae ae
Emitter-base voltage
Collector current (DC) Collector current-peak
Collector power dissipation Junction temperature Storage temperature
TC=25ae
80 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;RBE= IC=1m A; IE=0 IE=1m A; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V 15 MIN 400 400 7
2SC2305
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V V
1.0 1.5 10 10 |I |I
V V A A
DC current gain

CHA IN
E SEM NG
OND IC
TOR UC
50 10
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2305

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
3

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