![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION *Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz *High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS *Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 70 mA PC 0.25 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2351 TYP. MAX UNIT A A ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 IEBO Emitter Cutoff Current VEB= 2.0V; IC= 0 0.1 hFE DC Current Gain IC= 20mA ; VCE= 10V 40 200 fT COB S21e2 NF Current-Gain--Bandwidth Product IC= 20mA;VCE= 10V IE= 0 ; VCB= 10V; f= 1MHz 4.5 GHz Output Capacitance 0.75 1.0 pF Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9 11 dB Noise Figure IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 3.0 dB MAG Maximum Available Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 14 dB hFE Classification Class Marking hFE E/P R2 40-120 F/Q R3 100-200 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 isc Websitewww.iscsemi.cn |
Price & Availability of 2SC2351
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |