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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 300 300 6 0.1 0.2 UNIT V V V A A Emitter-base voltage Collector current-peak Ta=25ae 1.25 W 10 150 -40~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC2371 SYMBOL MAX UNIT VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A 1.5 V VBE Base-emitter on voltage IC=10mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=100|I A;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100|I A; IC=0 6 V hFE DC current gain IC=10mA ; VCE=10V 40 250 ICBO Collector cut-off current VCB=200V; IE=0 IEBO COB IN Emitter cut-off current Output capacitance VEB=4V; IC=0 fT Transition frequency CHA E SEM NG IE=0; VCB=30V;f=1MHz OND IC TOR UC 0.1 3 0.1 |I A |I A pF IE=10mA ; VCB=30V 50 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2371 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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