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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 200 100 7 7.5 15 3.0 UNIT V V V A A A W ae ae Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter voltage Emitter-base voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5A; IB=0.5 A IC=5A; IB=0.5 A IC=30mA; IB=0 IE=1.0mA; IC=0 VCB=150V;IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=0.1A ; VCE=5V;f=3.0MHz 15 5.0 100 7 MIN 2SC2373 SYMBOL VCEsat VBEsat VCEO VEBO ICBO IEBO hFE fT TYP. MAX 1.5 1.5 UNIT V V V V 10 10 70 |I |I A A ton ts tf Fall time Turn-on time Storage time CHA IN L 25-45 E SEM NG K 35-70 VCC=20V;IC=5.0A IB1=-IB2=0.6A PW=20|I s OND IC TOR UC 1.0 2.5 1.0 MHz |I |I |I s s s hFE classifications M 15-35 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2373 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2373 CHA IN E SEM NG OND IC TOR UC 4 |
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