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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High collector breakdown voltage : VCEO=400V(Min) Excellent switching time : tr=1.0|I s(Max.) : tf=1.0|I s(Max. APPLICATIONS High speed high voltage switching applications Switching regulator applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SC2534 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB IN Emitter PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current CHA E SEM NG OND IC CONDITIONS TOR UC VALUE 500 400 6 2 0.5 UNIT V V V A A Open emitter Open base Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 20 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=400V ;IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 20 MIN 400 500 6 2SC2534 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V V 1.0 1.5 100 1 |I V V A mA Switching times tr tstg tf Rise time IN Storage time Fall time CHA E SEM NG OND IC TOR UC 1.0 2.5 1.0 |I |I |I s s s VCC=200V; IB1=-IB2=50mA;RL=400| Duty cycleU 1% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2534 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534 CHA IN E SEM NG OND IC TOR UC 4 |
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