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SMD Type
Silicon NPN Triple Diffused Type 2SC3138
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High voltage. VCBO = 200 V (max) VCEO = 200 V (max) Small flat package.
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 200 5 50 20 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO Testconditons VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 200 200 70 0.1 0.75 50 100 2 0.3 2 0.4 4 240 0.5 1.5 V V MHz pF is is is Min Typ Max 0.1 0.1 Unit iA iA V V
V(BR)CBO IC = 0.1 mA, IE = 0 V(BR)CEO IC = 1 mA, IB = 0 hFE VCE = 3 V, IC = 10 mA
VCE (sat) IC = 10 mA, IB = 1 mA VBE (sat) IC = 10 mA, IB = 1 mA fT Cob ton tstg tf VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz pulse width = 5is,duty cycle 2 IB1=-IB2=0.6 mA VCC=50V,IC=6mA
hFE Classification
Marking Rank hFE NO O 70 140 NY Y 120 240
+0.1 0.38-0.1
0-0.1
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