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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed ,high speed Low saturation voltage Bult-in damper diode APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae A A 8 16 4 50 150 -55~150 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=300mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 83 8 5 170 1.3 3 12 9 pF V MHz MIN 5 5 1.5 1 250 TYP. MAX UNIT V V V mA mA SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT Switching times resistive load ts tf Storage time TOR NDU ICO E SEM ANG INCH IF=6A IC=0.1A ; VCE=10V 1 ICP=6A;IB1 =1.2A IB2=-2.4A; RL=33| 1.8 Fall time 0.1 1.8 3.0 |I |I s s 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4763 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 TOR NDU ICO E SEM ANG INCH 4 |
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