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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1632
DESCRIPTION With TO-3PFa package High voltage ,high speed Built-in damper diode Wide area of safe operation APPLICATIONS For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg

PARAMETER
CHA IN
Collector current Base current
Collector-base voltage Emitter-base voltage
E SEM NG
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 1500 5 4 15 3.5
UNIT V V A A A W ae ae
Open collector
Collector current-peak
Collector power dissipation Junction temperature Storage temperature
TC=25ae
70 130 -55~130
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1632
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)EBO
Emitter-base breakdown voltage
IE=500mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=1A
1.5
V
VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0
50
|I
A
1
mA
hFE
DC current gain
IC=3A ; VCE=10V
5
VF
Switching times
IN
Fall time
Diode forward voltage

IC=-4A
tstg
Storage time
tf
CHA
E SEM NG
OND IC
H
TOR UC
2.2 9 |I
15
V
4
s
IC=3A IBend=1A;LLeak=5|I
0.8
|I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1632

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3

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