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| SMD Type Medium Power Transistor 2SD1760 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature * Pw=100ms. Tc = 25 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 3 4.5 15 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=1mA IE=50iA VCB=40V VEB=4V 0.5 82 90 40 Testconditons Min 60 50 5 1 1 1 390 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC=2A,IB=0.2A hFE fT Cob VCE=3V,IC=0.5A VCE=5V, IE= -500mA, f=30MHz VCB=10V, IE=0A, f=1MHz hFE Classification Rank hFE P 82 180 Q 120 270 R 180 390 3.80 www.kexin.com.cn 1 |
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