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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage :VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER VCEO VEBO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter 2SD386 120 Collector-emitter voltage Open base 2SD386A 150 6 Emitter-base voltage Open collector 2SD386 3 Collector current 2SD386A 2 10 TC=25ae 25 Collector current-Peak UNIT V V V IC A ICM A PC Collector dissipation Ta=25ae 1.75 150 -40~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD386 IC=25mA; IB=0 2SD386A 2SD386 IC=1A; IB=0.1A 2SD386A VBEsat ICBO IEBO hFE fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=1A; IB=0.1A VCB=180V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.5A ; VCE=5V CONDITIONS 2SD386 2SD386A SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 150 1.0 V 1.5 1.8 1.0 5.0 40 8 320 V mA mA VCEsat Collector-emitter saturation voltage hFE Classifications C 40-80 D NDU ICO E SEM ANG INCH E F 60-120 100-200 160-320 TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD386 2SD386A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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