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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD424 DESCRIPTION With TO-3 package Complement to type 2SB554 High power dissipation High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 180 Collector-base voltage Open emitter Collector-emitter voltage Open base 180 5 15 1.5 TC=25ae 150 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Collector Fig.1 simplified outline (TO-3) and symbol UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD424 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1A ;IB=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE COB fT hFE Classifications R 40-80 O 70-140 TOR NDU ICO E SEM ANG INCH DC current gain IC=2A ; VCE=5V 40 Output capacitance IE=0 ; VCB=10V;f=1.0MHz 300 Transition frequency IC=2A ; VCE=5V 5 140 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD424 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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