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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD437 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator and power amplifier applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 600 Collector-base voltage Open emitter Collector-emitter voltage Open base 350 6 Emitter-base voltage Open collector Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 10 15 80 150 -65~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCB=600V;IE=0 VEB=6V; IC=0 MIN 350 6 TYP. 2SD437 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE-2 MAX UNIT V V 1.5 3.0 1.4 1.8 0.1 0.1 50 V V V V mA mA TOR NDU ICO E SEM ANG INCH IC=1A ; VCE=5V IC=6A ; VCE=5V 15 10 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD437 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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