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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO PARAMETER VCEO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 70 Collector-base voltage Open emitter 2SD476 50 Collector-emitter voltage Open base 2SD476A 60 5 4 8 TC=25ae 40 150 -55~150 Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V VEBO IC ICM PC Tj Tstg V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage 2SD476 IC=50mA; RBE= 2SD476A V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain IE=10|I A; IC=0 IC=10|I CONDITIONS A ; IE=0 2SD476 2SD476A SYMBOL V(BR)CBO MIN 70 50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V 60 5 1.0 1.2 1 35 60 |I V V V A IC=2 A;IB=0.2 A IC=2 A;IB=0.2 A VCB=50V; IE=0 IC=0.1A ; VCE=4V IC=1A ; VCE=4V Switching times ton toff tstg NDU ICO E SEM ANG INCH Transition frequency IC=0.5A ; VCE=4V Turn-on time Turn-off time IC=0.5A ; VCC=10.5V IB1=-IB2=0.05 A Storage time TOR 200 7 0.3 3.0 2.5 MHz |I |I |I s s s hFE-2 classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD476 2SD476A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A TOR NDU ICO E SEM ANG INCH 4 |
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