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| SMD Type Transistors IC 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 30 16 4.1 20 2 1.6 P- Channel -60 20 -3.4 -20 Unit V V A A W PD 1 0.9 -55 to 150 78 40 W /W /W www.kexin.com.cn 1 SMD Type KDS8333C Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSS VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Transistors IC Min 30 -30 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 25 -22 1 -1 100 100 1 -1 1.7 -1.8 -4.2 3.7 67 81 103 105 80 130 145 130 200 220 3 -3 mV/ VDS = 24V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = VGS = 16V, VDS = 0 V 20 V, VDS = 0 V A A A nA V VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ VGS = 10 V, ID =4.1A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 4.1 A,TJ = 125 VGS = 4.5 V, ID =3.2 A VGS = -10 V, ID =-3.4A Static Drain-Source On-Resistance RDS(on) VGS = -10 V, ID =-3.4 A,TJ = 125 VGS = -4.5 V, ID =-2.5A On-State Drain Current Forward Transconductance Input Capacitance ID(on) gFS Ciss VGS = 10 V, VDS = 5V VGS = -10 V, VDS = -5V VDS = 5V, ID = 4.1A VDS = -5V, ID = -3.4A N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel Reverse Transfer Capacitance Crss VDS = -10 V, VGS = 0 V,f = 1.0 MHz P-Ch N-Ch P-Ch Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RG td(on) tr td(off) tf Qg Qgs Qgd VGS= 15 mV, f=1.0MHz VGS=-15 mV, f=1.0MHz N-Channel VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 N-Channel VDS =10V,ID=4.1A,VGS=4.5V RGEN = 6 P-Channel VDS=-10V,ID=-3.4A,VGS=-4.5V(Note 2) (Note 2) (Note 2) (Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -5 P-Ch m 167 147 A 9 5 282 185 49 56 20 26 2.3 -9.6 4.5 4.5 6 13 19 11 1.5 2 4.7 4.1 0.9 0.8 0.6 0.4 9 9 12 23 34 20 3 4 6.6 5.7 ns ns ns ns nC nC nC pF S pF Output Capacitance Coss pF 2 www.kexin.com.cn SMD Type KDS8333C Electrical Characteristics Ta = 25 Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VSD trr Qrr Testconditons VGS = 0 V, IS = 1.3A (Not 2) VGS = 0 V, IS = -1.3A (Not 2) IF = 4.1 A, diF/dt = 100 A/ IF = -3.4 A, diF/dt = 100 A/ IF = 4.1 A, diF/dt = 100 A/ IF = -3.4 A, diF/dt = 100 A/ s s s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ 0.8 0.8 16.3 14.5 26.7 21.1 Max 1.2 -1.2 Unit V nS nC www.kexin.com.cn 3 |
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