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Freescale Semiconductor Technical Data
Document Number: MRF6VP21KH Rev. 2, 9/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. * Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 24 dB Drain Efficiency -- 67.5% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power Features * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Excellent Thermal Stability * Designed for Push - Pull Operation * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP21KHR6
10 - 235 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230 PART IS PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol RJC Value (1,2) 0.03 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP21KHR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 110 -- --
Typ -- -- -- --
Max 20 -- 100 5
Unit Adc Vdc Adc mA
Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.68 2.2 0.28
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
3.3 147 506
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 225 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. Gps D IRL 22 65 -- 24 67.5 - 15 26 -- -9 dB % dB
MRF6VP21KHR6 2 RF Device Data Freescale Semiconductor
VBIAS + C1 + C2 +
B1
R2 L1 R1 L4 C4 C5 C6 C7 C8 C9 C10 C11 C21 Z14 C13 C14 C15 + +
VSUPPLY +
C3
C16 C17 C18 C19 C20
Z10 Z12 Z4 RF INPUT Z6 Z8
Z16 RF OUTPUT
Z1
Z2 L2
Z3 J1 Z5 C12 T1 Z7
L3 Z9
Z18 DUT Z11 Z13 C23 Z15 C24 Z17 T2 C22 J2
Z19
C25
Z1 Z2* Z3* Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11
0.100 1.557 0.055 0.133 0.143 0.357 0.200
x 0.082 x 0.082 x 0.082 x 0.193 x 0.518 x 0.518 x 0.518
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z12, Z13 Z14, Z15 Z16*, Z17* Z18 Z19 PCB
0.599 x 0.253 Microstrip 0.110 x 0.253 Microstrip 0.055 x 0.253 Microstrip 0.069 x 0.082 Microstrip 1.050 x 0.082 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP21KHR6 Test Circuit Schematic
Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C9, C17 C5, C16 C6, C15 C7 C8 C10, C11, C13, C14 C12, C21, C22 C18, C19, C20 C23, C24 C25 J1, J2 L1 L2 L3 L4* R1 R2 T1 T2 *L4 is wrapped around R2. Description 95 , 100 MHz Long Ferrite Bead 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10K pF Chip Capacitors 20K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitor 0.22 F, 100 V Chip Capacitor 1000 pF Chip Capacitors 27 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 68 pF Chip Capacitors 4.7 pF Chip Capacitor Jumpers from PCB to T1 and T2 82 nH Inductor 8 nH Inductor 1 Turn Inductor, Red Coil 10 Turn #18AWG Inductor, Handwound 1 K, 1/4 W Axial Leaded Resistor 20 , 3 W Chip Resistor Balun Balun Part Number 2743021447 476KXM050M T491X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1825C223K1GAC ATC100B102JT50XT ATC100B270JT500XT EKME630ELL471MK25S ATC100B680JT500XT ATC100B4R7JT500XT Copper Foil 1812SMS - 82NJC A03TKLC GA3092 - AL Copper Wire CMF601000R0FKEK CPF320R000FKE14 TUI - 9 TUO - 4 Vishay Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft CoilCraft Manufacturer Fair - Rite Illinois Cap Kemet Kemet ATC ATC Kemet Kemet Kemet ATC ATC Multicomp ATC ATC
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 3
C1
C19 C4 C5 C6 C17 C16 C15
B1 L1
C18
C2 C3 C7 C8 C9 C11
C20 C14
R1 C10 J1 T1 C23
L4, R2* C21 C13 T2 C24 L3 C12 CUT OUT AREA J2
L2
C22
C25
MRF6VP21KH Rev. 1
* L4 is wrapped around R2.
Figure 3. MRF6VP21KHR6 Test Circuit Component Layout
MRF6VP21KHR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) 100
C, CAPACITANCE (pF)
TJ = 200C TJ = 175C 10 TJ = 150C
10
Crss
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain - Source Voltage
26 VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz 25 Pulse Width = 100 sec, Duty Cycle = 20% Gps, POWER GAIN (dB) 24 23 22 21 20 19 10 D Gps 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 40 30 20 10 2000 65 64 63 62 61 60 59 58 57 56 55 30
Note: Each side of device measured separately. Figure 5. DC Safe Operating Area
P3dB = 61.33 dBm (1358.31 W) P1dB = 60.37 dBm (1088.93 W)
Ideal
Actual
VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz Pulse Width = 100 sec, Duty Cycle = 20% 31 32 33 34 35 36 37 38 39 40
100 Pout, OUTPUT POWER (WATTS) PULSED
1000
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
28 IDQ = 6000 mA 26 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 3600 mA 1500 mA 750 mA 22 375 mA 150 mA VDD = 50 Vdc, f = 225 MHz Pulse Width = 100 sec, Duty Cycle = 20% 18 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 12 0 24 28
Figure 7. Pulsed Output Power versus Input Power
24
20 VDD = 30 V 16 IDQ = 150 mA, f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 200 400 600 800 1000 1200 1400 1600 35 V 40 V 45 V 50 V
20
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain versus Output Power
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
65 TC = -30_C Pout, OUTPUT POWER (dBm) 60 Gps, POWER GAIN (dB) 85_C 25_C 55 26 VDD = 50 Vdc 25 IDQ = 150 mA f = 225 MHz 24 Pulse Width = 100 sec Duty Cycle = 20% 23 22 21 20 19 18 10 Gps D 30 20 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 10 2000 TC = -30_C 90 80 70 85_C 60 25_C 50 40 D, DRAIN EFFICIENCY (%)
50
45
VDD = 50 Vdc IDQ = 150 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 25 30 35 40 45
40 20
Pin, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus Input Power
0.2 ZJC, THERMAL IMPEDANCE (C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.0001 0.001 0.01 D = 0.1 PD t1 t2
D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power
109
D = 0.7 MTTF (HOURS) 10 108
D = 0.5
107
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 67.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
0.1
1
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
Figure 13. MTTF versus Junction Temperature
MRF6VP21KHR6 6 RF Device Data Freescale Semiconductor
f = 225 MHz
Zsource
Zo = 5
f = 225 MHz Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 225 Zsource W 1.16 + j4.06 Zload W 2.86 + j1.10
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6VP21KHR6 8 RF Device Data Freescale Semiconductor
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Jan. 2008 Apr. 2008 * Initial Release of Data Sheet * Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the footnote to read "L4" versus "L3", p. 3. * Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 Sept. 2008 * Added Note to Fig. 4, Capacitance versus Drain - Source Voltage, to denote that each side of device is measured separately, p. 5 * Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per - side basis, p. 5 * Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 Description
MRF6VP21KHR6 10 RF Device Data Freescale Semiconductor
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MRF6VP21KHR6
Document Number: RF Device Data MRF6VP21KH Rev. 2, 9/2008 Freescale Semiconductor
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