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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION *With TO-126 package *Complement to type 2SC2590 *Excellent current IC characteristics of forward current transfer ratio hFE vs. collector *High transition frequency fT *Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS *For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute Maximun Ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -0.5 -1.0 1.2* 150 -55~150 UNIT V V V A A W Note) *: Without heat sink Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-100A;IB=0 IE=-10A ;IC=0 IC=-0.3A ;IB=-30mA IC=-0.3A ;IB=-30mA IC=-150mA ; VCE=-10V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-50mA ; VCB=-10V, 65 50 MIN -120 -5 2SA1110 TYP. MAX UNIT V V -1.0 -1.2 330 100 30 200 V V pF MHz hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1110 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1110 4 |
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