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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION *With TO-220 package *Complement to type 2SC2591/2592 *Good linearity of hFE *High VCEO APPLICATIONS *For audio frequency, high power amplifiers application PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA1111 VCBO Collector-base voltage 2SA1112 2SA1111 VCEO Collector-emitter voltage 2SA1112 VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -5 -1 -1.5 20 150 -55~150 V A A W Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1111 2SA1112 MIN TYP. MAX UNIT 2SA1111 V(BR)CEO Collector-emitter breakdown voltage 2SA1112 IC=-0.1mA ,IB=0 B -150 V -180 V(BR)EBO Emitter-base breakdown voltage IE=-10A ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 -2.0 V A A ICBO Collector cut-off current VCB=-120V; IE=0 -1 IEBO Emitter cut-off current VEB=-4V; IC=0 -1 hFE-1 hFE-2 DC current gain IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V 65 330 DC current gain 50 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=50mA ; VCE=-10V 200 MHz hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1111 2SA1112 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 4 |
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