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| SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High voltage VCEO : 160V +0.1 1.3-0.1 High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 180 160 5 50 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transiston frequency * Pulse test: tp 350 is; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 130V, IE=0 VEB = 5V, IC=0 VCE =3V , IC = 15mA VCE =3V , IC = 1mA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 90 70 200 180 0.1 0.73 2.3 120 0.3 1.0 V V pF MHz Min Typ Max 0.1 0.1 400 Unit A A hFE Classification Marking hFE 90 N5 180 N6 135 270 N7 200 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC1654 Typical Characteristics Transistors IC Fig.1 Total Power Dissipation vs. Ambient Temperature Fig.2 Collector Current vs. Collector to Emitter Voltage Fig.3 Collector Current vs. Base to Emitter Voltage Fig.4 Collector Current vs. Collector to Emitter Voltage Fig.5 DC Current Gain vs. Collector Current 2 www.kexin.com.cn SMD Type 2SC1654 Transistors IC Fig.6 Base And Collector Saturation Voltage vs. Collector Current Fig.8 Input And Output Capacitance vs. Reverse Voltage www.kexin.com.cn 3 |
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