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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High breakdown voltage High speed switching time APPLICATIONS For use in high-voltage,high-speed ,power switching in inductive circuit. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2502 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector dissipation Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 500 400 7 6 12 2 UNIT V V V A A A W ae ae Open collector Collector current-peak TC=25ae 50 150 -55~150 Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCE=320V ;IB=0 VCB=500V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=2V IC=6A ; VCE=2V IC=0.6A ; VCE=10V;f=1MHz 15 MIN 400 2SC2502 SYMBOL VCEO(SUS) VCEsat VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.7 1.5 100 100 1 |I |I V V A A mA Switching times ton tstg tf Transition frequency CHA IN Turn-on time Storage time Fall time E SEM NG OND IC 10 TOR UC 8 1.0 3.0 0.7 MHz |I |I |I s s s IC=3A IB1=-IB2=0.6A; RL=10| ,VCC=30V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2502 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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