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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER Open emitter Open base CHA IN Collector current Base current Base current-Peak Emitter-base voltage E SEM NG Open collector DUC CON I CONDITIONS VALUE 600 TOR 7 3 6 1 2 UNIT V V V A A A A W ae ae 450 Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 25 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=1.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.3A ; VCE=10V 10 5 CONDITIONS IC=0.1A ;IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A MIN 450 TYP. 2SC4052 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 mA Switching times ton ts tf Fall time Turn-on time Storage time INC E SEM ANG H OND IC TOR UC 20 0.5 2.0 0.2 MHz |I |I |I s s s IC=1.5A;IB1=0.3A IB2=0.6A ,RL=100| VBB2=4V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4052 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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