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| SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1U (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA 200 0.042 0.61 30 4.8 160 7 Min Typ Max 0.1 0.1 1200 0.1 V V MHz pF ns Unit iA iA VCE (sat) IC = 30 A, IB = 3 mA VBE fT Cob ton VCE = 2 V, IC = 4 mA VCE = 6 V, IC = 4 mA VCB = 10 V, IE = 0, f = 1 MHz Storage time tstg 500 ns Fall time tf Duty cycle 2% 130 ns hFE Classification Marking hFE AA 200 700 AB 350 1200 www.kexin.com.cn 1 |
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