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| FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor August 2007 FDB8444TS (R) N-Channel PowerTrench MOSFET with Temperature Sensor 40V, 70A, 5m Features Typ rDS(on) = 3.8m at VGS = 10V, ID = 70A Typ Qg(TOT) = 130nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant tm Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems TO263 5 LEADS (c)2007 Fairchild Semiconductor Corporation FDB8444TS Rev. A (W) 1 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC = 140oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) Parameter Ratings 40 20 70 20 See Figure 4 439 181 1.2 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 2 0.83 43 o o C/W C/W Package Marking and Ordering Information Device Marking FDB8444TS Device FDB8444TS Package TO-263 5LDS Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V, VGS = 0V VGS = 20V TC = 150oC 40 1 250 100 V A nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 70A, VGS= 10V ID = 70A, VGS= 10V, TJ = 175oC 2 2.8 3.8 6.5 4 5 8.5 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(10) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 70A 8410 765 485 1.8 260 130 15.5 33 17.7 30 338 169 pF pF pF nC nC nC nC nC nC FDB8444TS Rev. A (W) 2 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 20V, ID = 70A VGS = 10V, RGS = 2 14.6 19.1 44 17.3 96 98 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 70A ISD = 40A ISD = 70A, dISD/dt = 100A/s 1.0 0.9 51 70 1.25 1.0 66 91 V ns nC Temperature Sense Diode Characteristics Vf Sf Temperature Sense Diode Voltage Temperature Sense Diode Temperature Coefficient If = 1mA If = 1mA, -55oC < TJ < 175oC 1.58 -2.55 1.61 -2.74 1.63 -3.11 V mV/oC Notes: 1: Starting TJ = 25oC, L = 0.28mH, IAS = 56A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8444TS Rev. A (W) 3 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 160 1.0 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY PACKAGE VGS = 10V 120 80 40 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 1E-3 -5 10 SINGLE PULSE 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 IDM, PEAK CURRENT (A) 1000 100 SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDB8444TS Rev. A (W) 4 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor Typical Characteristics 1000 10us 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100us 10 LIMITED BY PACKAGE STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED o TC = 25 C 1ms 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 VGS = 20V VGS = 10V VGS = 5V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 5V TJ = 175oC TJ = 25 C TJ = -55 C o o 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 VGS, GATE TO SOURCE VOLTAGE (V) 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = 70A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 8 6 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 70A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 175oC TJ = 25oC 2 0 4 8 12 16 20 VGS, GATE TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDB8444TS Rev. A (W) 5 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor Typical Characteristics 1.2 VGS = VDS ID = 250A 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.0 1.10 1.05 1.00 0.95 0.90 -80 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20 ID = 70A 10000 Ciss VGS, GATE TO SOURCE VOLTAGE(V) VDD = 15V 15 VDD = 20V VDD = 25V 10 Coss 1000 Crss f = 1MHz VGS = 0V 5 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 300 Figure 13. Capacitance vs Drain to Source Voltage 1.8 FORWARD VOLTAGE (Vf) If = 1mA Figure 14. Gate Charge vs Gate to Source Voltage 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE(oC) Figure 15. Temperature Sense Diode Forward Voltage vs. Juction Temperature FDB8444TS Rev. A (W) 6 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench(R) MOSFET with Temperature Sensor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB8444TS Rev. A (W) 7 www.fairchildsemi.com |
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