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| FDMS5672 N-Channel UltraFET Trench(R) MOSFET December 2007 FDMS5672 N-Channel UltraFET Trench(R) MOSFET 60V, 22A, 11.5m Features General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5m at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant tm Application DC - DC Conversion Pin 1 S S S G D D D D D D D 5 6 7 8 4G 3S 2 S D 1S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 60 20 22 65 10.6 60 337 78 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W Package Marking and Ordering Information Device Marking FDMS5672 Device FDMS5672 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMS5672 Rev.C2 1 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V 60 59 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 10.6A Drain to Source On Resistance VGS = 6V, ID = 8A VGS = 10V, ID = 10.6A, TJ = 125C VDS = 10V, ID = 10.6A 2 3.2 -11 9.4 13.0 15.0 26 11.5 16.5 18.0 S m 4 V mV/C Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 2100 375 120 1.2 2800 500 180 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VDD = 30V ID = 10.6A VDD = 30V, ID = 10.6A VGS = 10V, RGEN = 6 16 17 22 8 32 10 8.3 29 31 35 16 45 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 10.6A (Note 2) 0.80 35 42 1.20 53 63 V ns nC IF = 10.6A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on minimum pad of 2 oz copper a 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 15A, VDD = 60V, VGS = 10V. FDMS5672 Rev.C2 2 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = 10V VGS = 8V VGS = 5V VGS = 6V VGS = 7V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 100 80 60 40 VGS = 10V VGS = 8V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 7V VGS = 6V VGS = 5V 20 0 0 1 2 3 4 0 20 40 60 80 100 120 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 10.6A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 25 20 ID =10.6A TJ = 125oC 15 TJ = 25oC 10 5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 60 50 40 30 TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V ID, DRAIN CURRENT (A) 10 1 0.1 TJ = -55oC TJ = 150oC TJ = 25oC 20 TJ = 150oC TJ = -55oC 10 0 0.01 1E-3 0.0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS5672 Rev.C2 3 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 VDD = 40V ID = 10.6A VDD = 20V 4000 Ciss CAPACITANCE (pF) VDD = 30V 1000 Coss 4 2 0 100 40 0.1 f = 1MHz VGS = 0V Crss 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 35 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 Limited by Package RJC = 1.6 C/W o 20 IAS, AVALANCHE CURRENT(A) 10 VGS = 10V TJ = 25oC VGS = 6V TJ = 125oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 500 0 25 50 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 10 1 100us 1ms 10ms 100ms VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ---------------------125 TA = 25oC 100 I = I25 0.1 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25oC 1s 10s DC 10 SINGLE PULSE 1E-3 0.1 1 10 100 500 1 0.6 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS5672 Rev.C2 4 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 5E-3 -3 10 SINGLE PULSE 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS5672 Rev.C2 5 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench(R) MOSFET FDMS5672 Rev.C2 6 www.fairchildsemi.com FDMS5672 N-Channel UItraFET Trench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS5672 Rev. C2 7 www.fairchildsemi.com |
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