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| Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Hochstzulassige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C RMS, f= 50Hz, t= 1min Tvj= 25C Tc= 55C Tc= 25C tp= 1ms, Tc= 55C Tc= 25C, Transistor VCES IC,nom. IC ICRM Ptot VGES IF IFRM It VISOL 600 50 55 100 V A A A 202 W +20 V 50 A 100 A 630 As 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sattigungsspannung collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current VGE= 15V, Tvj= 25C, IC= IC,nom VGE= 15V, Tvj= 125C, IC= IC,nom VCE= VGE, Tvj= 25C, IC= 1mA VGE= -15V...+15V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 0V, VGE= 20V, Tvj= 25C VCEsat VGE(th) QG Cies Cres ICES IGES min. 4,5 typ. 1,95 2,20 5,5 max. 2,55 6,5 V V V - 0,3 - C 2,2 nF 0,2 nF - - 5 mA - - 400 nA prepared by: P. Kanschat approved: R. Keggenhoff date of publication: 2002-11-25 revision: 2.1 1 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter IC= 50A, VCC= 300V Einschaltverzogerungszeit (induktive Last) turn on delay time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Abschaltverzogerungszeit (induktive Last) turn off delay time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V, VGE= 15V RG= 3,3, Tvj= 125C, L= 15nH IC= 50A, VCC= 300V, VGE= 15V RG= 3,3, Tvj= 125C, L= 15nH tP 10sec, VGE 15V, Tvj= 125C, VCC=360V, VCEmax=VCES -LCE *|di/dt| Eon Eoff ISC LCE RCC/EE tf 20 30 0,5 ns ns mJ td,off 120 130 ns ns tr 11 12 ns ns td,on 42 43 ns ns min. typ. max. - 1,35 - mJ - 225 - A - 35 - nH - 4 - m Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= 50A, VGE= 0V, Tvj= 25C IF= 50A, VGE= 0V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s Sperrverzogerungsladung recovered charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s Ausschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 1,05 1,50 mJ mJ Qr 3,2 5,4 C C IRM 88 94 A A VF 1,25 1,20 1,7 V V 2 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Charakteristische Werte / characteristic values NTC-Widerstand / NTC-thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value Tc= 25C Tc= 100C, R100= 493 Tc= 25C R2= R1 exp[B(1/T2 - 1/T1)] R25 R/R P25 B25/50 min. typ. 5 max. k -5 - 5 % - - 20 mW - 3375 - K Thermische Eigenschaften / thermal properties Innerer Warmewiderstand; DC thermal resistance, juncton to case; DC Warmewiderstand; DC thermal resistance, junction to heatsink, DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W / m*K / grease = 1 W / m*K Ubergangs-Warmewiderstand, DC thermal resistance, case to heatsink; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W / m*K / grease = 1 W / m*K Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvjmax Top Tstg 150 C RthCH 0,35 0,45 K/W K/W RthJC RthJH 0,95 1,50 0,62 1,20 K/W K/W K/W K/W -40 - 125 C -40 - 125 C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anpresskraft pro Feder mounting force per clamp Gewicht weight Kriechstrecke creepage distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal Luftstrecke clearance distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal F Al2O3 225 40..80 N G 36 g 13,5 mm 5,0 mm 12,0 mm 5,0 mm 3 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 100 90 80 70 60 IC [A] 50 40 30 20 10 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 Tvj = 25C Tvj = 125C IC= f(VCE) VGE= 15V 2,5 3,0 3,5 Ausgangskennlinienfeld (typisch) output characteristic (typical) 100 90 80 70 60 IC [A] 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V IC= f(VCE) Tvj= 125C 3,5 4,0 4,5 5,0 4 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) transfer characteristic (typical) 100 90 80 70 60 IC [A] 50 40 30 20 10 0 5 6 7 8 9 VGE [V] 10 Tvj = 25C Tvj = 125C IC= f(VGE) VCE= 20V 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward characteristic of inverse diode (typical) 100 90 80 70 60 IF [A] 50 40 30 20 10 0 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 Tvj = 25C Tvj = 125C IF= f(VF) 1,2 1,4 1,6 5 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Schaltverluste (typisch) switching losses (typical) 3 2,5 2 E [mJ] 1,5 1 0,5 0 0 10 20 30 40 Eon Eoff Erec Eon = f(IC), Eoff = f(IC), Erec = f(IC) VGE= 15V, RG= 3,3, VCE= 300V, Tvj= 125C 50 IC [A] 60 70 80 90 100 Schaltverluste (typisch) switching losses (typical) 3 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE= 15V, IC= 50A, VCE= 300V, Tvj= 125C 2 E [mJ] 1 0 0 5 10 15 RG [] 20 25 30 35 6 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Transienter Warmewiderstand transient thermal impedance 1,0000E+01 ZthJH = f (t) ZthJH(K/W) 1,0000E+00 1,0000E-01 1,0000E-02 0,001 0,01 0,1 t (s) Zth:IGBT Zth:Diode 1 10 i ri [K/kW]: IGBT i [s]: IGBT ri [K/kW]: Diode i [s]: Diode 1 57,0 0,00075 75,0 0,00056 2 190,0 0,02088 210,0 0,01240 3 532,0 0,14800 885,0 0,12800 4 171,0 0,25430 330,0 0,25430 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) 120 100 IC,Chip VGE= 15V, Tj=125C 80 IC [A] 60 40 20 0 0 IC, Modul 200 400 VCE [V] 600 7 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Schaltbild circuit diagram Gehausemae package outline Bohrplan drilling layout 8 (9) Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorlaufige Daten preliminary data Gehausemae Fortsetzung package outline contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 9 (9) Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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