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| PD-95309A IRF7324D1PBF FETKYa MOSFET / Schottky Diode l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint Lead-Free A A S G 1 8 K K D D 2 7 VDSS = -20V RDS(on) = 0.27 Schottky Vf = 0.39V 3 6 4 5 Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dV/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. -20 12 -2.2 -1.8 -22 2.0 Units V f Power Dissipation f Power Dissipation c A W Peak Diode Recovery d 1.3 -0.74 16 -55 to + 150 V/ns mW/C C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. --- --- Max. 20 62.5 Units C/W Notes through are on page 8 www.irf.com 1 12/06/04 IRF7324D1PBF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) IDSS IGSS gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units -20 --- --- --- 0.155 0.270 --- 0.260 0.400 -0.70 --- --- --- --- -1.0 --- --- -25 --- --- 100 --- --- -100 2.4 --- --- --- 5.2 7.8 --- 0.88 --- --- 2.5 --- --- 10 --- --- 12 --- --- 11 --- --- 7.6 --- --- 260 --- --- 140 --- --- 70 --- V V A nA S nC Conditions VGS = 0V, ID = -250A VGS = -4.5V, ID = -1.2A VGS = -2.7V, ID = -0.6A VDS = VGS, ID = -250A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125C VGS = -12V VGS = 12V VDS = -16V, ID = -2.2A ID = -2.2A VGS = -4.5V VDD = -16V VDD = -10V, VGS = -4.5V ID = -2.2A RG = 6.0 RD = 4.5 VGS = 0V VDS = -15V = 1.0MHz e e e ns pF MOSFET Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 26 24 -2.2 -22 -1.2 39 36 Conditions V ns nC TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A, VDD = -10V di/dt = 100A/s e e Schottky Diode Maximum Ratings IF(av) ISM Parameter Max. Average Forward current Max.Peak one cycle Non-repetitive Surge Current Max. Units 1.7 1.2 120 11 A Conditions 50% Duty Cycle Rectangular Wave, TA = 25C TA = 70C 5s sine or 3s Rect. Pulse 10ms sine or 6ms Rect. Pulse Following any rated load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward Voltage Drop Max. Units 0.50 0.62 0.39 0.57 0.05 10 92 3600 V IRM Ct dV/dt Max. Reverse Leakage Current Max. Junction Capacitance Max. Voltage Rate of Charge mA Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C VR = 20V TJ = 25C TJ = 125C pF VR = 5Vdc (100kHz to 1MHz) 25C V/s Rated VR 2 www.irf.com IRF7324D1PBF Power Mosfet Characteristics 1000 TOP 100 -ID, Drain-to-Source Current (A) 100 -ID, Drain-to-Source Current (A) 10 BOTTOM VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V TOP 10 BOTTOM VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V 1 1 0.1 -1.5V 60s PULSE WIDTH Tj = 25C -1.5V 0.1 60s PULSE WIDTH Tj = 150C 1 10 0.01 0.1 1 10 0.1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 100.0 -ID, Drain-to-Source Current() -ISD, Reverse Drain Current (A) TJ = 25C 10.0 TJ = 150C 10.0 TJ = 150C 1.0 1.0 TJ = 25C VDS = -10V 0.1 1.0 2.0 3.0 4.0 60s PULSE WIDTH 5.0 6.0 7.0 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VGS, Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7324D1PBF Power Mosfet Characteristics ID = -2.2A VGS = -4.5V RDS ( on) , Drain-to-Source On Resistance () 1.5 0.164 RDS(on) , Drain-to-Source On Resistance (Normalized) VGS= - 4.5V 0.160 0.156 1.0 0.152 VGS= - 5.0V 0.148 0.144 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TJ , Junction Temperature (C) -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current ( RDS (on), Drain-to -Source On Resistance ) 0.4 100 ID = -2.2A 0.3 -ID, Drain-to-Source Current (A) TJ = 25C OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 10 0.2 1msec 0.1 0.0 2.0 4.0 6.0 8.0 10.0 Tc = 25C Tj = 150C Single Pulse 1 1 10 10msec 100 -VGS, Gate-to-Source Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7324D1PBF Power Mosfet Characteristics 600 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 400 12 -VGS, Gate-to-Source Voltage (V) ID= -2.2A 10 8 6 4 2 0 VDS= -16V VDS= -10V 500 C, Capacitance (pF) 300 Ciss 200 Coss Crss 100 0 1 10 100 0 2 4 6 8 10 12 -VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7324D1PBF Schottky Diode Characteristics 10 100 10 TJ = 150C 125C 100C 75C 50C 25C Reverse Current - IR (mA) 1 0.1 0.01 0.001 Instantaneous Forward Current - IF (A) 0.0001 1 ) 0 4 8 12 16 20 TJ = 150C TJ = 125C TJ = 25C Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V FM (V) VFM (V) Forward Votage Fig. 12 -Typical Forward Voltage Drop Characteristics Fig.14 - Typical Junction capacitance Vs.Reverse Voltage 6 www.irf.com IRF7324D1PBF SO-8 (Fetky) Package Outline D A 5 B (Dimensions are shown in millimeters (inches) ) DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FETKY) DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER INTERNATIONAL RECTIFIER LOGO XXXX 807D1 www.irf.com 7 IRF7324D1PBF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD -2.2A, di/dt -96A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, steady-state R is measured at TJ of approximately 90C. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 8 www.irf.com |
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