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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 55V(Min) *Low Saturation Voltage: VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS *Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEV VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ Ta=25 Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 75 75 65 55 5 7 3 1.8 UNIT V V V V V A A PC W 50 150 -65~150 TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.5 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N5493 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100 65 V VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V 75 V VCE(sat) VBE(on) ICEV Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A IC= 2.5A ; VCE= 4V VCE= 70V; VBE= -1.5V VCE= 70V; VBE= -1.5V;TC= 125 VCE= 55V; RBE= 100 VCE= 55V; RBE= 100; TC= 125 VEB= 5V; IC= 0 1.0 V Base-Emitter On Voltage 1.3 1.0 5.0 0.5 3.5 1.0 V Collector Cutoff Current mA ICER Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 2.5A ; VCE= 4V 20 100 fT Current-Gain--Bandwidth Product IC= 0.5A ; VCE= 4V 0.8 MHz Switching Times s s ton toff Turn-On Time IC= 2.5A; IB1= -IB2= 0.25A Turn-Off Time 5 15 isc Websitewww.iscsemi.cn 2 |
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