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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 *High Switching Speed *Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS *Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2N6338 2N6339 VCBO Collector-Base Voltage VALUE 120 140 160 2N6338/6339/6340/6341 UNIT VCEO Collector-Emitter Voltage w ww 2N6340 2N6341 2N6338 2N6339 2N6340 2N6341 scs .i 180 100 120 140 150 7 25 50 10 200 200 -65~200 .cn mi e V V V A A A VEBO IC ICM IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER 2N6338 Collector-Emitter Sustaining Voltage 2N6339 IC= 50mA ; IB= 0 2N6340 2N6341 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 2N6338 Collector Cutoff Current IC= 10A; IB= 1A IC= 25A; IB= 2.5A IC= 10A; IB= 1A IC= 25A; IB= 2.5A 2N6338/6339/6340/6341 CONDITIONS MIN 100 120 MAX UNIT VCEO(SUS) V 140 150 1.0 1.8 1.8 V V V V V IC= 10A ; VCE= 2V ICEO ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain ww w 2N6340 2N6341 2N6339 scs .i VEB= 6V; IC=0 VCE= 50V; IB= 0 VCE= 60V; IB= 0 VCE= 70V; IB= 0 VCE= 75V; IB= 0 .cn mi e 50 30 12 40 2.5 1.8 50 50 A 50 50 10 10 1.0 0.1 A A mA mA VCB= RatedVCBO; IE= 0 VCE= RatedVCEO;VBE(off)= 1.5V VCE= RatedVCEO;VBE(off)= 1.5V,TC=150 IC= 0.5A ; VCE= 2V IC= 10A ; VCE= 2V IC= 25A ; VCE= 2V IC= 1A ; VCE= 10V ;ftest= 10MHz IE= 0 ; VCB= 10V ;ftest= 0.1MHz 120 Current-Gain--Bandwidth Product Output Capacitance MHz 300 pF Switching Times tr tstg tf Rise Time Storage Time VCC= 80V; IC= 10A; IB1= -IB2= 1A, Fall Time 0.25 s VCC= 80V; IC= 10A;IB1= 1A, VBE(off)= 6V 0.3 1.0 s s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2N6338
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