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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA940 DESCRIPTION *Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) *DC Current Gain : hFE= 40-140@ IC= -0.5A *Complement to Type 2SC2073 APPLICATIONS *Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE -150 -150 -5 -1.5 -3.0 25 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA940 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.5 V Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.85 V A A Collector Cutoff Current VCB= -120V ; IE= 0 -10 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 hFE DC Current Gain IC= -0.5A ; VCE= -10V 40 140 fT Current-Gain--Bandwidth Product IC= -0.5A;VCE= -10V;ftest= 1MHz 4 MHz isc Websitewww.iscsemi.cn 2 |
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