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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -140 -5 -7 -12 UNIT V V V A A Open collector TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 70 W 3 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA ; IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 MIN -140 TYP. 2SB1254 SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT MAX UNIT V -2.5 -3.0 -100 -100 -100 |I |I |I V V A A A Transition frequency Switching times ton ts tf HAN INC Turn-on time Storage time Fall time SEM GE OND IC TOR UC 20 1.0 1.5 1.2 30000 MHz |I |I |I s s s IC=-6A; VCC=50V IB1=-IB2=-6mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1254 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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