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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 DESCRIPTION With MT-200 package Complement to type 2SA1216 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25ae Open emitter Open base OND IC CONDITIONS TOR UC VALUE 180 180 5 17 5 200 150 -55~150 UNIT V V V A A W ae ae Open collector Base current Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=8A IB=0.8A VCB=180V; IE=0 VEB=5V; IC=0 IC=8A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 30 250 50 MIN 180 2SC2922 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V 2.0 100 100 |I |I V A A pF MHz Switching times ton ts tf Turn-on time Storage time IN Fall time hFE classifications O 30-60 Y 50-100 CHA P E SEM NG G 90-180 IC=10A;RL=4| IB1=- IB2=1A VCC=40V OND IC TOR UC 0.20 |I |I |I 1.30 0.45 s s s 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2922 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 CHA IN E SEM NG OND IC TOR UC 4 |
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