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Datasheet File OCR Text: |
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION *High Gain: Gpe= 24dB TYP. @ f= 200MHz *Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS *Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB B Base Current-Continuous 10 mA PC Collector Power Dissipation @TC=25 0.15 W TJ Junction Temperature 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3122 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 A hFE DC Current Gain IC= 2mA ; VCE= 10V 60 300 Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.3 0.45 pF fT Current-Gain--Bandwidth Product IC= 2mA ; VCE= 10V 400 650 MHz Gpe Power Gain VCE= 12V; VAGC= 1.4V;f= 200MHz 20 24 28 dB NF Noise Figure 2.0 3.2 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 isc Websitewww.iscsemi.cn 4 |
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