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| SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.2 9.70 -0.2 High speed tf 0.5is +0.1 0.80-0.1 +0.15 0.50 -0.15 High voltage VCEO=600V 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Total power dissipation Junction temperature Storage temperature *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm Ta= 25 *2 Symbol VCBO VCES VEBO ICP IC PT Tj Tstg Rating 600 600 7 2 1 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter collecotr cutoff current Emitter cutoff current DC Current Gain Collector saturation voltage Base to saturation voltage Gain Bandwidth Product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT cob ton tstg tf Testconditons VCB=600V,IE=0 VEB=7V,IC=0 VCE=5V,IC=100mA VCE=5V,IC=100mA IC=400mA,IB=80mA IC=400mA,IB=80mA VCE=5V,IE=-50mA VCB=10V,IE=0A,f=1MHz IC=0.5A,RL=500U IB1=-IB2=0.1A VCC=250V 30 5 55 7 0.35 0.9 30 14 0.1 4.0 0.2 0.5 5.0 0.5 1.0 1.2 V V MHz pF is is is Min Typ Max 10 10 120 Unit iA iA hFE Classification Marking hFE M 30 to 60 L 40 to 80 K 60 to 120 3.80 Features www.kexin.com.cn 1 |
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