View AOL1413_4325669.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AOL1413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen and Antimony Free Green Device*
Features
VDS (V) = -30V ID = -20A (VGS = -10V) RDS(ON) < 17m (VGS = -10V) RDS(ON) < 36m (VGS = -5V) ESD Protected!
Ultra SO-8TM Top View D Bottom tab connected to drain G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain B Current Pulsed Drain Current Continuous Drain A Current Power Dissipation B Power Dissipation A
C
D
G S
S
Maximum -30 25 -38 -27 -70 -9 -7 38 19 2.1 1.3 -55 to 175
Units V V
VGS TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C TA=70C IDSM PD PDSM TJ, TSTG ID IDM
A
W W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 18 49 2.9
Max 25 60 4
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-5V, ID=-20A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=20A IS=1A,VGS=0V Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A TJ=125C -1.5 -70 13.5 18.5 28 27 -0.72 -1 -40 1760 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 360 255 6.4 30 VGS=-10V, VDS=-15V, ID=-20A 11 7 8 11.5 VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 IF=-20A, dI/dt=100A/s 8 35 18.5 24 16 30 8 38 2200 17 24 36 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC -2.5 Min -30 -1 -5 10 -3.5 Typ Max Units V A uA V A m
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s
A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on t<10s R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev2: Dec 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 60 50 ID(A) 40 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 -5V -4.5V 5 VGS=-4V 0 2 2.5 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 3 5 25C 15 ID(A) 25 -10V VDS=-5V 125C
20
10
40.0 Normalized On-Resistance
1.8 ID=-20A 1.6 VGS=-10V 1.4
30.0 RDS(ON) (m ) VGS=-5V 20.0
1.2
VGS=-5V
10.0 VGS=-10V 0.0 0 5 10 15 20 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 ID=20A 40 125C RDS(ON) (m )
1
0.8 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C
30
TC=100C
20
TA=25C
10
-55 to 175
25C
0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
0.2
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 5 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 35 VDS=-15V ID=-20A Capacitance (pF) 2500 Ciss
2000
1500
1000
Coss
500 Crss 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
0
1000
100 TJ(Max)=175C TC=25C RDS(ON) limited 10s Power (W) 100s 1ms 80
100
ID (Amps)
10
60
1 TJ(Max)=175C TC=25C
DC
10ms
0.1
40
0.01 0.01
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.1
100
20 0.0001
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.9C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient Thermal Resistance
TC=100C TA=25C
0.1 PD
-55 to 175
Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Current rating ID(A) 50
Power Dissipation (W)
40
30
20
10
0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
100
80 Power (W)
60
40
20
0 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=49C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 100 1000
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
Charge
ton td(on) tr td(off) toff tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
EAR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
www.aosmd.com

▲Up To Search▲

Price & Availability of AOL1413

	To Download AOL1413 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .