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| AP4002T RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test Fast Switching Characteristics Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 5 400mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. TO-92 D S G Absolute Maximum Ratings Symbol VDS VGS ID@TL=25 IDM PD@TL=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 400 3 2 0.017 20 2 -55 to 150 -55 to 150 Units V V mA A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit /W /W Data & specifications subject to change without notice 201019072-1/4 AP4002T Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Test Conditions VGS=0V, ID=1mA VGS=10V, ID=400mA VDS=VGS, ID=250uA VDS=10V, ID=400mA VDS=600V, VGS=0V VGS=30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50,VGS=10V RD=200 VGS=0V VDS=10V f=1.0MHz Min. 600 2 - Typ. 570 12 2 5.5 10 12 52 19 375 170 45 Max. Units 5 4 100 1 19 600 V V mS uA uA nC nC nC ns ns ns ns pF pF pF Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25, IS=2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/s Min. - Typ. 340 2.2 Max. Units 1.5 V ns uC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 3.Pulse test o THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP4002T 2 2 T A =25 o C ID , Drain Current (A) 1.5 10V 7.0V 6.0V T A =150 C o 1.5 10V 7.0V 6.0V 5.0V ID , Drain Current (A) 1 1 5.0V V G = 4.5 V 0.5 0.5 V G = 4.5 V 0 0 4 8 12 0 0 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =400mA V G =10V Normalized BVDSS (V) Normalized RDS(ON) 1.1 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 1.2 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 6 IS (A) T j = 150 o C 4 o T j = 25 C Normalized VGS(th) (V) 1 0.8 0.6 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4002T 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) 12 C iss I D =2A V DS =480V 8 C (pF) 100 C oss 4 C rss 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 1 0.2 1ms ID (A) 10ms 0.1 0.1 0.1 0.05 100ms 1s 0.01 0.02 0.01 PDM 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjl + T L Rthjl=60 oC/W T L =25 C Single Pulse o DC Single Pulse 0.001 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-92 E SYMBOLS Millimeters MIN NOM MAX A D E b L e1 4.32 4.1 3.1 ---12.7 ---- 4.83 4.8 3.9 0.38 --1.27 5.34 5.3 4.7 ----------- A SEATING PLANE 1.All Dimensions Are in Millimeters. L 2.Dimension Does Not Include Mold Protrusions. D e1 b Part Marking Information & Packing : TO-92 Part Number 4002T YWWSSS Package Code Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence |
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