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FDS6984AS
J
May 2008
FDS6984AS
General Description
Dual Notebook Power Supply N-Channel PowerTrench(R) SyncFETTM
Features
* Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) max= 20 m @ VGS = 10V RDS(on) max= 28 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (8nC typical) RDS(on) max= 31 m @ VGS = 10V RDS(on) max= 40 m @ VGS = 4.5V * RoHS Compliant The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
8.5A, 30V
5.5A, 30V
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25C unless otherwise noted
Parameter
Q2
30 20
(Note 1a)
Q1
30 20 5.5 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
8.5 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6984AS Device FDS6984AS Reel Size 13" Tape width 12mm Quantity 2500 units
(c)2008 Fairchild Semiconductor Corporation
FDS6984AS Rev A1(X)
FDS6984AS
Electrical Characteristics
Symbol
BVDSS IDSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125C
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 All 30 30 500 1 2.3 79 100 V A mA nA nA
Off Characteristics
IGSS
Gate-Body Leakage
(Note 2)
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
ID(on) gFS
On-State Drain Current Forward Transconductance
VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TJ = 125C VGS = 4.5 V, ID = 4.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.5 A VDS = 5 V, ID = 5.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q2 Q1 Q2 Q1 Q2
1 1
Q1
1.7 1.8 -3 -4 17 24 21 26 34 32
3 3
V mV/C
20 32 28 31 43 40
m
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
30 20 25 18 530 420 170 120 60 50 3.1 2.2
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF
FDS6984AS Rev A1 (X)
FDS6984AS
Electrical Characteristics
Symbol
td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd
(continued)
TA = 25C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 8 9 5 6 23 22 4 2 9 10 7 11 13 13 4 3 10 8 5 4 1.5 1.3 1.9 1.5 16 18 10 12 37 35 8 4 18 19 14 20 24 24 8 6 14 11 8 6 ns ns ns ns ns ns ns ns nC nC nC nC
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6
Total Gate Charge, Vgs = 10V Total Gate Charge, Vgs = 5V Gate-Source Charge Gate-Drain Charge Q2: VDS = 15 V, ID = 8.5 A Q1: VDS = 15 V, ID = 5.5 A
Drain-Source Diode Characteristics and Maximum Ratings
IS trr Qrr trr Qrr VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 10A, dIF/dt = 300 A/s IF = 5.5A, dIF/dt = 100 A/s VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 1.3 A 3.0 1.3 13 6 17 6 0.6 0.8 0.7 1.2 A ns nC ns nC V
(Note 3)
(Note 3) (Note 2) (Note 2)
Q2 Q1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. See "SyncFET Schottky body diode characteristics" below. 3. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS6984AS Rev A 1(X)
FDS6984AS
Typical Characteristics: Q2
30
VGS = 10V 3.5V
2
VGS = 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0
1.8
6.0V 4.5V
4.0V
1.6
3.5V
3.0V
1.4
4.0V 4.5V 5.0V 6.0V 10V
1.2
2.5V
1
0.8
0.5
1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
5
10 15 20 ID, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 8.5A VGS = 10V
ID = 4.25A 0.05
1.45 1.3 1.15 1
0.04 TA = 125oC 0.03
0.85 0.7 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0.02
TA = 25oC
0.01 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
30
VDS = 5V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
25 ID, DRAIN CURRENT (A) 20 15
TA = 125 C
o
IS, REVERSE DRAIN CURRENT (A)
10
1
TA = 125oC 25 C -55oC
o
-55 C
o
0.1
10 5 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
25oC
0.01
0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics: Q2
10 VGS, GATE-SOURCE VOLTAGE (V)
ID =8.5A
800 f = 1MHz VGS = 0 V
8
CAPACITANCE (pF)
VDS = 10V 20V
600
Ciss
6
15V
400
4
Coss 200
2
Crss
0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100
100s 50
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25oC
40
ID, DRAIN CURRENT (A)
10
SINGLE PULSE RJA = 135C/W TA = 25C
30
1
20
0.1
10
0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics Q1
20
VGS = 10V 4.0V 4.5V 3.5V
2.4 VGS = 3.0V
16 ID, DRAIN CURRENT (A)
6.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V
12
8
3.0V
4
2.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3
0
5
10 ID, DRAIN CURRENT (A)
15
20
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.1
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 5.5A VGS = 10V
ID = 2.75A 0.08
1.4
1.2
0.06 TA = 125oC 0.04 TA = 25 C 0.02
o
1
0.8
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 13. On-Resistance Variation with Temperature.
20
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V 16 ID, DRAIN CURRENT (A)
VGS = 0V
10
1
TA = 125oC
12
0.1
25 C
o
8 TA = 125 C 4 25oC 0 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.5
o
-55oC
0.01
-55oC
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics Q1
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 8
600 f = 1MHz VGS = 0 V 500 20V CAPACITANCE (pF) VDS = 10V
400
6 15V 4
Ciss
300 Coss 200
2
100 Crss
0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10
0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT 100s 1ms P(pk), PEAK TRANSIENT POWER (W) 50
Figure 18. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
40
10
SINGLE PULSE RJA = 135C/W TA = 25C
10ms 100ms 1s 10s
30
1
DC
20
0.1
VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25 C
o
10
0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) * RJA RJA = 135C/W P(pk) t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A) 0.01
125oC
0.001
100oC
0.0001
3A/DIV
0.00001
25oC
0.000001 0 10 20 VDS, REVERSE VOLTAGE (V) 30
Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
10nS/DIV
Figure 22. FDS6984AS SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6984A).
3A/DIV
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6984A) body diode reverse recovery characteristic.
FDS6984AS Rev A1 (X)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDS6984AS Rev.A1(X)

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