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| LL4150 HIGH-SPEED SWITCHING DIODE FEATURES High reliability High forward current capability DL - 35 APPLICATIONS High speed switch and general purpose use in computer and industrial applications .063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3) CONSTRUCTION Silicon epitaxial planar .146(3.7) .130(3.3) Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter Repetitive peak reverse voltage Reverse Vltage Peak forward surge current Forward current Average forward current (TJ=25) Test Conditions Type Symbol VRRM VR tp=1uS Value 100 Unit V V 75 75 IFSM IF IFAV PV TJ TsTg 75 53 A mA mA mW VR=0 Power dissipation Junction temperature Storge temperature range 300 -65 ~ +175 MAXIMUM THERMAL RESISTANCE Parameter Junction ambient (TJ=25) Test Conditions Symbol RthJA Value 500 Unit K/W On PC board 50mm*50mm*1.6mm ELECTRICAL CHARACTERISTICS Parameter TJ=25 Test Conditions IF=1mA IF=10mA Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA uA pF ns Forward voltage IF=50mA IF=100mA IF=200mA VR=50V VR=50V, Tj=150 VR=0, f=1MHZ, VHF=50mA IF= IR=10...100mA,RL=100 Reverse current Diode capacitance Reverse recovery time ~ 425 ~ RATING AND CHARACTERISTIC CURVES LL4150 FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 400 FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE 600 TJ=175C TYPICAL VALUES 300 IF (m A) 200 IF (m A) 400 TJ=25C TYPICAL VALUES 200 100 0 0 100 Tamb(C) 200 0 0 1 VF (V) 2 FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE 1000 1.2 FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) 100 1.0 IR (uA) 10 VR=75V TYPICAL VALUES Cd (pF) 0.8 1 0.6 VR=20V TYPICAL VALUES 0.1 0.4 0 0.01 0 100 TJ((C) 200 10 VR(V) 20 f=1MHZ,TJ=25C ~ 426 ~ |
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