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| 19-4293; Rev 0; 10/08 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer General Description The MAX19999 dual-channel downconverter provides 8.3dB of conversion gain, +24dBm input IP3, +11.4dBm 1dB input compression point, and a noise figure of 10.5dB for 3000MHz to 4000MHz WiMAXTM and LTE diversity receiver applications. With an optimized LO frequency range of 2650MHz to 3700MHz, this mixer is ideal for low-side LO injection architectures. In addition to offering excellent linearity and noise performance, the MAX19999 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, and a pair of differential IF output amplifiers. Integrated onchip baluns allow for single-ended RF and LO inputs. The MAX19999 requires a nominal LO drive of 0dBm and a typical supply current of 388mA at VCC = +5.0V or 279mA at VCC = +3.3V. The MAX19999 is pin compatible with the MAX19997A 1800MHz to 2900MHz mixer and pin similar with the MAX19985/MAX19985A and MAX19995/MAX19995A series of 700MHz to 2200MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19999 is available in a compact 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40C to +85C. o o o o o o o o o o o o o o Features 3000MHz to 4000MHz RF Frequency Range 2650MHz to 3700MHz LO Frequency Range 50MHz to 500MHz IF Frequency Range 8.3dB Conversion Gain +24dBm Input IP3 10.5dB Noise Figure +11.4dBm Input 1dB Compression Point 74dBc Typical 2 x 2 Spurious Rejection at PRF = -10dBm Dual Channels Ideal for Diversity Receiver Applications Integrated LO Buffer Integrated LO and RF Baluns for Single-Ended Inputs Low -3dBm to +3dBm LO Drive Pin Compatible with the MAX19997A 1800MHz to 2900MHz Mixer Pin Similar to the MAX9995/MAX9995A and MAX19995/MAX19995A 1700MHz to 2200MHz Mixers and the MAX9985/MAX9985A and MAX19985/MAX19985A 700MHz to 1000MHz Mixers 39dB Channel-to-Channel Isolation Single +5.0V or +3.3V Supply External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode MAX19999 Applications 3.5GHz WiMAX and LTE Base Stations Fixed Broadband Wireless Access Microwave Links Wireless Local Loop Private Mobile Radios Military Systems Pin Configuration/Functional Diagram and Typical Application Circuit appear at end of data sheet. o o o Ordering Information PART MAX19999ETX+ MAX19999ETX+T TEMP RANGE -40C to +85C -40C to +85C PIN-PACKAGE 36 Thin QFN-EP* 36 Thin QFN-EP* +Denotes a lead-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. WiMAX is a trademark of WiMAX Forum. ________________________________________________________________ Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 ABSOLUTE MAXIMUM RATINGS VCC to GND ...........................................................-0.3V to +5.5V RF_, LO to GND.....................................................-0.3V to +0.3V IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M, LO_ADJ_D to GND.................................-0.3V to (VCC + 0.3V) RF_, LO Input Power ......................................................+15dBm RF_, LO Current (RF and LO are DC shorted to GND through balun).................................................................50mA Continuous Power Dissipation (Note 1) ..............................8.7W JA (Notes 2, 3)..............................................................+38C/W JC (Note 3).....................................................................7.4C/W Operating Case Temperature Range (Note 4) ...................................................TC = -40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C Note 1: Based on junction temperature TJ = TC + (JC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature TJ = TA + (JA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, no input RF or LO signals applied, VCC = +4.75V to +5.25V, TC = -40C to +85C. Typical values are at VCC = +5.0V, TC = +25C, unless otherwise noted. R1 = R4 = 750, R2 = R5 = 698.) PARAMETER Supply Voltage Supply Current SYMBOL VCC ICC Total supply current CONDITIONS MIN 4.75 TYP 5 388 MAX 5.25 420 UNITS V mA +3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, no input RF or LO signals applied, T C = -40C to +85C. Typical values are at VCC = +3.3V, TC = +25C, unless otherwise noted. R1, R4 = 1.1k; R2, R5 = 845.) (Note 5) PARAMETER Supply Voltage Supply Current SYMBOL VCC ICC (Note 6) Total supply current CONDITIONS MIN 3 TYP 3.3 279 MAX 3.6 UNITS V mA RECOMMENDED AC OPERATING CONDITIONS PARAMETER RF Frequency LO Frequency SYMBOL fRF fLO (Notes 5, 7) (Notes 5, 7) Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Notes 5, 7) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Notes 5, 7) LO Drive Level PLO (Note 7) CONDITIONS MIN 3000 2650 TYP MAX 4000 3700 UNITS MHz MHz 100 500 MHz IF Frequency fIF 50 -3 250 +3 dBm 2 _______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8) PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point TCCG IP1dB SYMBOL GC CONDITIONS TC = +25C (Notes 6, 9) fRF = 3200MHz to 3900MHz, over any 100MHz band fRF = 3200MHz to 3900MHz, TC = -40C to +85C (Notes 6, 9, 10) fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone (Notes 6, 9) Third-Order Input Intercept Point IIP3 fRF = 3550MHz, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = +25C (Notes 6, 9) fRF1 - fRF2 = 1MHz, TC = -40C to +85C Single sideband, no blockers present (Notes 5, 6) Noise Figure NFSSB Single sideband, no blockers present, fRF = 3500MHz, TC = +25C (Notes 5, 6) Single sideband, no blockers present, TC = -40C to +85C fBLOCKER = 3700MHz, PBLOCKER = 8dBm, fRF = 3450MHz, fLO = 3100MHz, PLO = 0dBm, VCC = 5.0V, TC = +25C (Notes 5, 6, 11) PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + PRF = -5dBm, 175MHz, TC = +25C (Notes 6, 9) PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + 116.67MHz, TC = +25C PRF = -5dBm, (Notes 6, 9) LO on and IF terminated into a matched impedance RF and IF terminated into a matched impedance ZIF Nominal differential impedance at the IC's IF outputs 68 63 77 67 9.8 21.6 MIN 7.3 TYP 8.3 0.15 -0.01 11.4 24.3 dBm 22 24.3 MAX 9.3 UNITS dB dB dB/C dBm Third-Order Input Intercept Point Variation Over Temperature 0.3 10.5 10.5 0.018 13 dBm dB 11.5 dB/C Noise Figure Temperature Coefficient Noise Figure Under Blocking Conditions TCNF NFB 21 25 dB 74 dBc 69 86 dBc 76 15.4 14 200 dB dB 2RF-2LO Spurious Rejection 2x2 3RF-3LO Spurious Rejection 3x3 RF Input Return Loss LO Input Return Loss IF Output Impedance _______________________________________________________________________________________ 3 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8) PARAMETER SYMBOL CONDITIONS RF terminated into 50, LO driven by a 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit MIN TYP MAX UNITS IF Output Return Loss 18 dB RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50 (Notes 6, 9) (Notes 6, 9) 28 -31 -30 -23 -24 dB dBm dBm dBm Channel Isolation 36 39 dB +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8) PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point Third-Order Input Intercept Point Third-Order Input Intercept Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient 2RF-2LO Spurious Rejection 3RF-3LO Spurious Rejection RF Input Return Loss LO Input Return Loss NFSSB TCNF 2x2 3x3 TCCG IP1dB IIP3 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone fRF1 - fRF2 = 1MHz, TC = -40C to +85C Single sideband, no blockers present Single sideband, no blockers present, TC = -40C to +85C fSPUR = fLO + 175MHz fSPUR = fLO + 116.67MHz PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm SYMBOL GC fRF = 3200MHz to 3900MHz, over any 100MHz band fRF = 3200MHz to 3900MHz, TC = -40C to +85C CONDITIONS MIN TYP 8.0 0.15 -0.01 8.4 20.3 0.3 10.5 0.018 74 69 75 65 16 15.5 MAX UNITS dB dB dB/C dBm dBm dBm dB dB/C dBc dBc dB dB LO on and IF terminated into a matched impedance RF and IF terminated into a matched impedance 4 _______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8) PARAMETER IF Output Impedance SYMBOL ZIF CONDITIONS Nominal differential impedance at the IC's IF outputs RF terminated into 50, LO driven by a 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit MIN TYP 200 MAX UNITS MAX19999 IF Output Return Loss 19 dB RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50 28 -36 -34 -27 dB dBm dBm dBm Channel Isolation 38.5 dB Note 5: Note 6: Note 7: Not production tested. Guaranteed by design and characterization. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics section. Note 8: All limits reflect losses of external components, including a 0.9dB loss at fIF = 350MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 9: 100% production tested for functional performance. Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 source. Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. _______________________________________________________________________________________ 5 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Operating Characteristics (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) CONVERSION GAIN vs. RF FREQUENCY MAX19999 toc01 CONVERSION GAIN vs. RF FREQUENCY MAX19999 toc02 CONVERSION GAIN vs. RF FREQUENCY MAX19999 toc03 10 TC = +25C CONVERSION GAIN (dB) 9 TC = -30C 10 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 9 9 8 8 PLO = -3dBm, 0dBm, +3dBm 7 8 VCC = 4.75V, 5.0V, 5.25V 7 7 TC = +85C 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY MAX19999 toc04 INPUT IP3 vs. RF FREQUENCY MAX19999 toc05 INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE 26 INPUT IP3 (dBm) MAX19999 toc06 27 PRF = -5dBm/TONE 26 TC = +85C INPUT IP3 (dBm) 25 TC = +25C 27 PRF = -5dBm/TONE 26 INPUT IP3 (dBm) 27 25 25 24 TC = -30C 23 24 PLO = -3dBm, 0dBm, +3dBm 23 24 VCC = 4.75V, 5.0V, 5.25V 23 22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY TC = +85C 12 NOISE FIGURE (dB) TC = +25C NOISE FIGURE (dB) 11 10 9 TC = -30C 8 7 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) 8 7 3200 MAX19999 toc07 NOISE FIGURE vs. RF FREQUENCY MAX19999 toc08 NOISE FIGURE vs. RF FREQUENCY MAX19999 toc09 13 13 12 11 10 PLO = -3dBm, 0dBm, +3dBm 9 13 12 NOISE FIGURE (dB) 11 10 VCC = 4.75V, 5.0V, 5.25V 9 8 7 3375 3550 3725 RF FREQUENCY (MHz) 3900 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 6 _______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) 2RF-2LO RESPONSE vs. RF FREQUENCY MAX19999 toc10 MAX19999 2RF-2LO RESPONSE vs. RF FREQUENCY MAX19999 toc11 2RF-2LO RESPONSE vs. RF FREQUENCY PRF = -5dBm 80 MAX19999 toc12 90 PRF = -5dBm 80 TC = +85C 70 90 PRF = -5dBm PLO = 0dBm 2RF-2LO RESPONSE (dBc) 80 90 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) 70 PLO = +3dBm 60 PLO = -3dBm 70 60 TC = +25C TC = -30C 60 VCC = 4.75V, 5.0V, 5.25V 50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19999 toc13 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19999 toc14 3RF-3LO RESPONSE vs. RF FREQUENCY PRF = -5dBm 85 MAX19999 toc15 95 PRF = -5dBm 85 95 PRF = -5dBm 85 95 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) 75 TC = -30C, +25C, +85C 65 75 PLO = -3dBm, 0dBm, +3dBm 65 75 VCC = 4.75V, 5.0V, 5.25V 65 55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 INPUT P1dB vs. RF FREQUENCY MAX19999 toc16 INPUT P1dB vs. RF FREQUENCY MAX19999 toc17 INPUT P1dB vs. RF FREQUENCY VCC = 5.25V 12 INPUT P1dB (dBm) MAX19999 toc18 13 TC = +85C 12 INPUT P1dB (dBm) 13 13 12 INPUT P1dB (dBm) 11 TC = -30C 10 TC = +25C 11 PLO = -3dBm, 0dBm, +3dBm 10 11 VCC = 5.0V 10 VCC = 4.75V 9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 _______________________________________________________________________________________ 7 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) CHANNEL ISOLATION vs. RF FREQUENCY MAX19999 toc19 CHANNEL ISOLATION vs. RF FREQUENCY MAX19999 toc20 CHANNEL ISOLATION vs. RF FREQUENCY MAX19999 toc21 50 50 50 CHANNEL ISOLATION (dB) CHANNEL ISOLATION (dB) CHANNEL ISOLATION (dB) 45 45 45 40 40 40 35 TC = -30C, +25C, +85C 35 PLO = -3dBm, 0dBm, +3dBm 35 VCC = 4.75V, 5.0V, 5.25V 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc22 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc23 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc24 0 -10 TC = -30C -20 -30 -40 -50 -60 2600 2800 3000 3200 3400 LO FREQUENCY (MHz) TC = +25C, +85C 0 -10 -20 -30 -40 -50 -60 PLO = -3dBm, 0dBm, +3dBm 0 -10 -20 -30 -40 -50 -60 VCC = 4.75V, 5.0V, 5.25V LO LEAKAGE AT IF PORT (dBm) LO LEAKAGE AT IF PORT (dBm) LO LEAKAGE AT IF PORT (dBm) 3600 2600 2800 3000 3200 3400 LO FREQUENCY (MHz) 3600 2600 2800 3000 3200 3400 LO FREQUENCY (MHz) 3600 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19999 toc25 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19999 toc26 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19999 toc27 40 40 40 VCC = 4.75V, 5.0V, 5.25V RF-TO-IF ISOLATION (dB) 30 RF-TO-IF ISOLATION (dB) 30 TC = +85C TC = +25C RF-TO-IF ISOLATION (dB) 30 20 TC = -30C 20 PLO = -3dBm, 0dBm, +3dBm 20 10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 8 _______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc28 MAX19999 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc29 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc30 -10 -10 -10 LO LEAKAGE AT RF PORT (dBm) -20 TC = -30C, +25C, +85C LO LEAKAGE AT RF PORT (dBm) -20 PLO = -3dBm, 0dBm, +3dBm LO LEAKAGE AT RF PORT (dBm) -20 VCC = 4.75V, 5.0V, 5.25V -30 -30 -30 -40 -40 -40 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc31 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc32 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc33 -10 2LO LEAKAGE AT RF PORT (dBm) TC = -30C, +25C, +85C -20 -10 2LO LEAKAGE AT RF PORT (dBm) -10 2LO LEAKAGE AT RF PORT (dBm) -20 PLO = -3dBm, 0dBm, +3dBm -20 VCC = 4.75V, 5.0V, 5.25V -30 -30 -30 -40 -40 -40 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 -50 2700 3100 3500 LO FREQUENCY (MHz) 3900 RF PORT RETURN LOSS vs. RF FREQUENCY MAX19999 toc34 IF PORT RETURN LOSS vs. IF FREQUENCY fLO = 3200MHz 5 IF PORT RETURN LOSS (dB) VCC = 4.75V, 5.0V, 5.25V 10 15 20 25 30 MAX19999 toc35 0 fIF = 350MHz 5 RF PORT RETURN LOSS (dB) 10 15 20 PLO = -3dBm, 0dBm, +3dBm 25 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 0 4000 50 140 230 320 410 IF FREQUENCY (MHz) 500 _______________________________________________________________________________________ 9 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) LO PORT RETURN LOSS vs. LO FREQUENCY MAX19999 toc36 SUPPLY CURRENT vs. TEMPERATURE (TC) VCC = 5.25V 390 SUPPLY CURRENT (mA) MAX19999 toc37 0 400 LO PORT RETURN LOSS (dB) 5 PLO = -3dBm 10 380 15 PLO = 0dBm 20 PLO = +3dBm 370 VCC = 4.75V 360 VCC = 5.0V 25 2650 350 2900 3150 3400 LO FREQUENCY (MHz) 3650 -35 -15 5 25 45 TEMPERATURE (C) 65 85 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) CONVERSION GAIN vs. RF FREQUENCY MAX19999 toc38 CONVERSION GAIN vs. RF FREQUENCY VCC = 3.3V CONVERSION GAIN (dB) 9 MAX19999 toc39 CONVERSION GAIN vs. RF FREQUENCY MAX19999 toc40 10 TC = +25C CONVERSION GAIN (dB) 9 VCC = 3.3V TC = -30C 10 10 CONVERSION GAIN (dB) 9 8 8 8 7 TC = +85C 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 7 PLO = -3dBm, 0dBm, +3dBm 7 VCC = 3.0V, 3.3V, 3.6V 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 10 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) INPUT IP3 vs. RF FREQUENCY MAX19999 toc41 MAX19999 INPUT IP3 vs. RF FREQUENCY MAX19999 toc42 INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE 22 INPUT IP3 (dBm) MAX19999 toc43 23 TC = +85C 22 INPUT IP3 (dBm) TC = +25C 21 PRF = -5dBm/TONE VCC = 3.3V 23 PRF = -5dBm/TONE VCC = 3.3V 22 INPUT IP3 (dBm) 23 21 21 20 20 PLO = -3dBm, 0dBm, +3dBm 20 19 TC = -30C 19 19 VCC = 3.0V, 3.3V, 3.6V 18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY MAX19999 toc44 NOISE FIGURE vs. RF FREQUENCY VCC = 3.3V 12 NOISE FIGURE (dB) 11 10 9 8 7 PLO = -3dBm, 0dBm, +3dBm MAX19999 toc45 NOISE FIGURE vs. RF FREQUENCY MAX19999 toc46 13 TC = +85C 12 NOISE FIGURE (dB) 11 10 9 8 7 3200 3375 3550 3725 TC = -30C TC = +25C VCC = 3.3V 13 13 12 NOISE FIGURE (dB) 11 10 9 8 7 VCC = 3.0V, 3.3V, 3.6V 3900 3200 3375 3550 3725 3900 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) 2RF-2LO RESPONSE vs. RF FREQUENCY PRF = -5dBm VCC = 3.3V 2RF-2LO RESPONSE (dBc) 80 TC = +85C MAX19999 toc47 2RF-2LO RESPONSE vs. RF FREQUENCY MAX19999 toc48 2RF-2LO RESPONSE vs. RF FREQUENCY PRF = -5dBm 2RF-2LO RESPONSE (dBc) 80 VCC = 3.6V 70 MAX19999 toc49 90 90 PRF = -5dBm 2RF-2LO RESPONSE (dBc) 80 PLO = 0dBm VCC = 3.3V 90 70 70 60 TC = -30C 50 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) TC = +25C 60 PLO = +3dBm PLO = -3dBm 60 VCC = 3.3V VCC = 3.0V 50 50 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) ______________________________________________________________________________________ 11 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19999 toc50 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19999 toc51 3RF-3LO RESPONSE vs. RF FREQUENCY PRF = -5dBm 3RF-3LO RESPONSE (dBc) 75 MAX19999 toc52 MAX19999 toc58 MAX19999 toc55 85 PRF = -5dBm 3RF-3LO RESPONSE (dBc) 75 TC = +85C VCC = 3.3V 85 PRF = -5dBm VCC = 3.3V 3RF-3LO RESPONSE (dBc) 75 85 65 65 65 55 TC = -30C TC = +25C 55 PLO = -3dBm, 0dBm, +3dBm 55 VCC = 3.0V, 3.3V, 3.6V 45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY MAX19999 toc53 INPUT P1dB vs. RF FREQUENCY VCC = 3.3V 9 INPUT P1dB (dBm) INPUT P1dB (dBm) MAX19999 toc54 INPUT P1dB vs. RF FREQUENCY 10 VCC = 3.6V 9 10 TC = +85C 9 INPUT P1dB (dBm) VCC = 3.3V 10 8 TC = +25C 7 TC = -30C 8 8 VCC = 3.3V 7 VCC = 3.0V 7 PLO = -3dBm, 0dBm, +3dBm 6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) 6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) 6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) CHANNEL ISOLATION vs. RF FREQUENCY MAX19999 toc56 CHANNEL ISOLATION vs. RF FREQUENCY VCC = 3.3V CHANNEL ISOLATION (dB) 45 MAX19999 toc57 CHANNEL ISOLATION vs. RF FREQUENCY 50 50 VCC = 3.3V CHANNEL ISOLATION (dB) 45 50 CHANNEL ISOLATION (dB) 45 40 40 40 35 TC = -30C, +25C, +85C 35 PLO = -3dBm, 0dBm, +3dBm 35 VCC = 3.0V, 3.3V, 3.6V 30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 12 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc59 MAX19999 LO LEAKAGE AT IF PORT vs. LO FREQUENCY VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -10 -20 -30 PLO = -3dBm, 0dBm, +3dBm -40 -50 -60 MAX19999 toc60 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc61 0 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -10 -20 -30 -40 -50 -60 2600 2800 3000 3200 3400 TC = +85C TC = +25C TC = -30C 0 0 -10 -20 -30 VCC = 3.0V, 3.3V, 3.6V -40 -50 -60 LO LEAKAGE AT IF PORT (dBm) 3600 2600 2800 3000 3200 3400 3600 2600 2800 3000 3200 3400 3600 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19999 toc62 RF-TO-IF ISOLATION vs. RF FREQUENCY VCC = 3.3V RF-TO-IF ISOLATION (dB) PLO = -3dBm, 0dBm, +3dBm 30 MAX19999 toc63 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19999 toc64 40 VCC = 3.3V TC = +85C RF-TO-IF ISOLATION (dB) 30 40 40 VCC = 3.0V, 3.3V, 3.6V 30 RF-TO-IF ISOLATION (dB) 20 TC = -30C TC = +25C 20 20 10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) 10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc65 LO LEAKAGE AT RF PORT vs. LO FREQUENCY VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 PLO = -3dBm, 0dBm, +3dBm -30 MAX19999 toc66 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc67 -10 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 TC = -30C, +25C, +85C -30 -10 -10 LO LEAKAGE AT RF PORT (dBm) -20 VCC = 3.0V, 3.3V, 3.6V -30 -40 -40 -40 -50 2700 3100 3500 3900 LO FREQUENCY (MHz) -50 2700 3100 3500 3900 LO FREQUENCY (MHz) -50 2700 3100 3500 3900 LO FREQUENCY (MHz) ______________________________________________________________________________________ 13 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc68 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY VCC = 3.3V MAX19999 toc69 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc70 -10 2LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V -10 2LO LEAKAGE AT RF PORT (dBm) -10 2LO LEAKAGE AT RF PORT (dBm) -20 TC = -30C, +25C, +85C -30 -20 PLO = -3dBm, 0dBm, +3dBm -30 -20 VCC = 3.0V, 3.3V, 3.6V -30 -40 -40 -40 -50 2700 3100 3500 3900 LO FREQUENCY (MHz) -50 2700 3100 3500 3900 -50 2700 3100 3500 3900 LO FREQUENCY (MHz) LO FREQUENCY (MHz) RF PORT RETURN LOSS vs. RF FREQUENCY VCC = 3.3V fIF = 350MHz MAX19999 toc71 IF PORT RETURN LOSS vs. IF FREQUENCY fLO = 3200MHz MAX19999 toc72 0 5 RF PORT RETURN LOSS (dB) 10 15 20 25 0 5 IF PORT RETURN LOSS (dB) 10 15 20 25 30 PLO = -3dBm, 0dBm, +3dBm VCC = 3.0V, 3.3V, 3.6V 30 3000 3200 3400 3600 3800 4000 50 140 230 320 410 500 RF FREQUENCY (MHz) IF FREQUENCY (MHz) LO PORT RETURN LOSS vs. LO FREQUENCY VCC = 3.3V MAX19999 toc73 SUPPLY CURRENT vs. TEMPERATURE (TC) VCC = 3.6V VCC = 3.3V MAX19999 toc74 0 300 290 SUPPLY CURRENT (mA) 280 270 260 250 240 -35 VCC = 3.0V LO PORT RETURN LOSS (dB) 5 PLO = 0dBm 10 PLO = -3dBm 15 20 PLO = +3dBm 25 2650 2900 3150 3400 3650 -15 5 25 45 65 85 LO FREQUENCY (MHz) TEMPERATURE (C) 14 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Pin Description PIN 1 2, 5, 6, 8, 12, 15, 18, 23, 28, 31, 34 3, 7, 20, 22, 24, 25, 26, 27 4, 10, 16, 21, 30, 36 9 11 13, 14 17 19 29 32, 33 35 NAME RFMAIN GND GND VCC RFDIV IFD_SET IFD+, IFDLO_ADJ_D LO LO_ADJ_M IFM-, IFM+ IFM_SET FUNCTION Main Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. Ground. Not internally connected. Ground these pins or leave unconnected. Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed pad together. Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical Application Circuit). Diversity Channel RF Input. This input is internally matched to 50. Requires a DC-blocking capacitor. IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. Local Oscillator Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance MAX19999 -- EP Detailed Description The MAX19999 provides high linearity and low noise figure for a multitude of 3000MHz to 4000MHz WiMAX and LTE base-station applications. This device operates over an LO range of 2650MHz to 3700MHz and an IF range of 50MHz to 500MHz. Integrated baluns and matching circuitry allow 50 single-ended interfaces to the RF and LO ports. The integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the MAX19999's input to a range of -3dBm to +3dBm. The IF port incorporates a differential output, which is ideal for providing enhanced 2RF-2LO performance. required because the input is internally DC shorted to ground through each channel's on-chip balun. When using a 1.5pF DC-blocking capacitor, the RF port input return loss is typically 15dB over the RF frequency range of 3200MHz to 3900MHz. LO Input, Buffer, and Balun A two-stage internal LO buffer allows a wide input power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO input to the IF outputs are integrated on chip. RF Input and Balun The MAX19999's two RF inputs (RFMAIN and RFDIV) provide a 50 match when combined with a series DCblocking capacitor. This DC-blocking capacitor is High-Linearity Mixer The core of the MAX19999 is a pair of double-balanced, high-performance passive mixers. Exceptional 15 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 linearity is provided by the large LO swing from the onchip LO buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and NF performance is typically +24dBm, 74dBc, and 10.5dB, respectively, for low-side LO injection architectures covering the 3000MHz to 4000MHz RF band. Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of 3.3V. Doing so reduces the overall power consumption by up to 53%. See the +3.3V Supply AC Electrical Characteristics table and the relevant +3.3V curves in the Typical Operating Characteristics section to evaluate the power vs. performance trade-offs. Differential IF Output Amplifier The MAX19999 mixers have an IF frequency range of 50MHz to 500MHz. The differential, open-collector IF output ports require external pullup inductors to VCC. These pullup inductors are also used to resonate out the parasitic shunt capacitance of the IC, PCB components, and PCB to provide an optimized IF match at the frequency of interest. Note that differential IF outputs are ideal for providing enhanced 2RF-2LO rejection performance. Single-ended IF applications require a 4:1 balun to transform the 200 differential output impedance to a 50 single-ended output. After the balun, the IF return loss is typically 18dB. Layout Considerations A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19999 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Applications Information Input and Output Matching The RF and LO inputs are internally matched to 50. No matching components are required for RF frequencies ranging from 3000MHz to 4000MHz. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200 (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance down to a 50 singleended output (see the Typical Application Circuit). Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin with the capacitors shown in the Typical Application Circuit. Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX19999's 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19999 is mounted be designed to conduct heat from the exposed pad. In addition, provide the exposed pad with a low-inductance path to electrical ground. The exposed pad MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. Reduced-Power Mode Each channel of the MAX19999 has two pins (LO_ADJ, IF_SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger valued resistors can be used to reduce power dissipation at the expense of some performance loss. If 1% resistors are not readily available, 5% resistors can be substituted. 16 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Table 1. Application Circuit Component Values DESIGNATION C1, C8, C14 C4, C9, C13, C15, C17, C18 C10, C11, C12, C19, C20, C21 L1-L4 QTY 3 6 6 4 DESCRIPTION 1.5pF microwave capacitors (0402) 0.01F microwave capacitors (0402) 82pF microwave capacitors (0603) 120nH wire-wound high-Q inductors* (0805) 750 1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. R1, R4 2 1.1k 1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense Digi-Key Corp. of some performance loss. See the Typical Operating Characteristics. 698 1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. R2, R5 2 845 1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. 0 resistors (1206). These resistors can be increased in value to reduce power dissipation in the device but will reduce the compression point. Full P1dB performance achieved using 0 . 4:1 IF balun TC4-1W-17+ MAX19999 IC (36 TQFN-EP) Digi-Key Corp. SUPPLIER Murata Electronics North America, Inc. Murata Electronics North America, Inc. Murata Electronics North America, Inc. Coilcraft, Inc. Digi-Key Corp. Digi-Key Corp. R3, R6 2 Digi-Key Corp. T1, T2 U1 2 1 Mini-Circuits Maxim Integrated Products, Inc. *Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details. ______________________________________________________________________________________ 17 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Application Circuit C19 T1 VCC L1* R3 C21 IF MAIN OUTPUT L2* R1 VCC C20 4:1 VCC IFM_SET IFM+ GND LO_ADJ_M C18 R2 C17 IFM- C1 RF MAIN INPUT + RFMAIN GND GND 1 2 3 4 5 6 7 8 9 36 35 34 33 32 31 30 29 28 GND VCC GND VCC 27 GND GND GND GND GND GND VCC VCC GND LO C14 C15 MAX19999 26 25 24 23 22 21 VCC VCC C4 GND GND GND GND RF DIV INPUT C8 RFDIV EXPOSED PAD 20 19 LO 10 11 12 13 14 15 16 17 LO_ADJ_D IFD_SET GND GND VCC C9 R4 GND IFD+ IFD- VCC VCC 18 R5 VCC C13 C11 T2 L4* VCC R6 C12 L3* *USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY OF 200MHz. CONTACT THE FACTORY FOR DETAILS. C10 4:1 IF DIV OUTPUT 18 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer Pin Configuration/Functional Diagram 29 LO_ADJ_M 35 IFM_SET MAX19999 33 IFM+ TOP VIEW 36 VCC 32 IFM- 34 GND 31 GND + RFMAIN GND GND VCC GND GND GND GND RFDIV 1 2 3 4 5 6 7 8 9 28 GND 27 30 VCC GND GND GND GND GND GND VCC GND LO MAX19999 26 25 24 23 22 21 EXPOSED PAD 20 19 10 11 12 13 14 15 16 17 LO_ADJ_D IFD+ IFD_SET IFD- GND GND THIN QFN-EP (6mm x 6mm) EXPOSED PAD ON THE BOTTOM OF THE PACKAGE. GND VCC VCC 18 Chip Information PROCESS: SiGe BiCMOS PACKAGE TYPE 36 Thin QFN-EP Package Information For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE CODE T3666+2 DOCUMENT NO. 21-0141 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19 (c) 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc. |
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