 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter SFH 4200 SFH 4205 SFH 4200 SFH 4205 Wesentliche Merkmale * * * * * * Leistungsstarke GaAs-LED (35mW) Hoher Wirkunsgrad bei kleinen Stromen Homogene Abstrahlung Typische Peakwellenlange 950nm IR Reflow und TTW Loten geeignet Feuchte-Empfindlichkeitsstufe 2 nach JEDEC Standard J-STD-020A Features * * * * * * High Power GaAs-LED (35mW) High Efficiency at low currents Homogeneous Radiation Pattern Typical peak wavelength 950nm Suitable for IR reflow and TTW soldering Moisture Sensitivity Level 2 according to JEDEC Standard J-STD-020A Anwendungen * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Alarm- und Sicherungssysteme * IR Freiraumubertragung * IR-Scheinwerfer fur Kameras Applications * High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Alarm and safety equipment * IR free air transmission * IR spotlight for cameras Typ Type SFH 4200 SFH 4205 1) Bestellnummer Strahlstarkegruppierung 1) (IF = 100mA, tp = 20 ms) Ordering Code Radiant intensity grouping 1) Ie (mW/sr) Q62702-P978 Q62702-P5165 10.5 (>4) 10.5 (>4) gemessen bei einem Raumwinkel = 0.01 sr measured at a solid angle of = 0.01 sr 2003-12-09 1 SFH 4200, SFH 4205 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value - 40 ... + 100 3 100 2.2 180 450 Einheit Unit C V mA A mW K/W Top; Tstg VR IF (DC) IFSM Ptot Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block 200 K/W 2003-12-09 2 SFH 4200, SFH 4205 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimensions of the active chip area Symbol Symbol peak Wert Value 950 Einheit Unit nm 40 nm 60 0.09 0.3 x 0.3 10 Grad deg. mm2 mm ns A LxB LxW Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, Reverse current VR = 3 V Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, VF VF IR 1.5 ( 1.8) 3.2 ( 4.3) 0.01 ( 10) V V A e 35 mW TCI - 0.44 %/K IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TCV TC - 1.5 + 0.2 mV/K nm/K 2003-12-09 3 SFH 4200, SFH 4205 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Ie min. Ie typ. Ie typ. Werte Values 4 10.5 60 Einheit Unit mW/sr mW/sr mW/sr 2003-12-09 4 SFH 4200, SFH 4205 Relative Spectral Emission Irel = f () 100 OHF00777 Radiant Intensity Ie = f (IF) Ie 100 mA Single pulse, tp = 20 s 10 2 e OHF00809 Max. Permissible Forward Current IF = f (TA) 120 OHF00359 erel 80 F mA 100 e (100 mA) 80 60 10 0 R thJA = 375 K/W 60 40 10 -1 40 20 10 -2 20 10 -3 10 0 0 800 850 900 950 1000 nm 1100 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 100 C 120 TA Forward Current IF = f (VF) single pulse, tp = 20 s 10 4 mA 10 3 OHF00784 Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter IF 101 A 5 OHF00040 F P D= T t tP IF T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 10 2 10 1 10 0 100 5 10 -1 10 -2 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 VF tp 10 0 Radiation Characteristics Irel = f ( 40 30 20 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 2003-12-09 5 SFH 4200, SFH 4205 Mazeichnung Package Outlines SFH 4200 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 2.1 (0.083) 1.7 (0.067) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) (2.4) (0.095) 1.1 (0.043) 3.7 (0.146) 3.3 (0.130) 41 0.5 (0.020) Cathode marking 3.4 (0.134) 3.0 (0.118) 0.18 (0.007) 0.12 (0.005) 0.6 (0.024) 0.4 (0.016) GPLY6724 SFH 4205 (2.4 (0.094)) 2.8 (0.110) 2.4 (0.094) 4.2 (0.165) 3.8 (0.150) 0.7 (0.028) 1.1 (0.043) Cathode 2.54 (0.100) spacing (1.4 (0.055)) 0.9 (0.035) Anode (2.85 (0.112)) Cathode marking (0.3 (0.012)) (2.9 (0.114)) (R1) 4.2 (0.165) 3.8 (0.150) 3.8 (0.150) 3.4 (0.134) GPLY6880 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch) 2003-12-09 6 SFH 4200, SFH 4205 Lothinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplotung Dip, Wave and Drag Soldering Lotbadtemperatur Reflowlotung Reflow Soldering Maximale Durchlaufzeit Max. Transit Time 10 s Maximal zulassige LotzonenLotzeit temperatur Temperature of Soldering Zone 245 C Max. Perm. Temperature of the Soldering Bath Soldering Time TOPLED SIDELED 260 C 10 s Zusatzliche Informationen uber allgemeine Lotbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-12-09 7 |
Price & Availability of SFH4200
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |