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New Product SS22S, SS23S & SS24S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES * Low profile package * Ideal for automated placement * Low forward voltage drop, low power losses * High efficiency * High surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. (Note: These devices are not Q101 qualified.) MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max. 2A 20 V, 30 V, 40 V 40 A 0.517 V 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM dV/dt TJ, TSTG SYMBOL SS22S 22S 20 SS23S 23S 30 2.0 40 10000 - 55 to + 150 SS24S 24S 40 UNIT V V A A V/s C Document Number: 89008 Revision: 14-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SS22S, SS23S & SS24S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Instantaneous forward voltage (1) Reverse current (1) Typical junction capacitance Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TEST CONDITIONS IF = 1 A, IF = 2 A, rated VR 4.0 V, 1 MHz TJ = 25 C TJ = 25 C TJ = 100 C SYMBOL VF IR CJ TYP 0.436 0.517 13 1.65 130 MAX. 0.55 200 8 UNIT V A mA pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) P.C.B. mounted with 0.4 x 0.4" (10 x 10 mm) copper pad areas SYMBOL RJA RJL SS22S SS23S 75 25 SS24S UNIT C/W ORDERING INFORMATION (Example) PREFERRED P/N SS24S-E3/61T SS24S-E3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 2.4 1.2 Resistive or Inductive Load 2.0 1.0 D = 0.3 D = 0.2 D = 0.1 D = 1.0 D = 0.5 D = 0.8 Average Forward Rectified Current (A) Average Power Loss (W) 1.6 0.8 1.2 0.6 T 0.8 P.C.B. Mounted on 0.4 x 0.4" (10 x 10 mm) Copper Pad Areas 0.4 0.4 0.2 D = tp/T 0 100 125 150 175 0 0.5 1.0 1.5 2.0 tp 2.5 0 0 25 50 75 Lead Temperature (C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89008 Revision: 14-Jan-08 New Product SS22S, SS23S & SS24S Vishay General Semiconductor 50 100000 Instantaneous Reverse Current (A) Peak Forward Surge Current (A) At rated TL 8.3 ms Single Half Sine-Wave 40 TJ = 150 C 10000 TJ = 125 C 1000 30 20 100 10 10 TJ = 25 C 0 0 10 100 1 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Reverse Leakage Characteristics 100 1000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 TJ = 125 C Junction Capacitance (pF) 0.9 1.1 1.3 TJ = 150 C 100 1 TJ = 25 C 0.1 0.1 10 0.3 0.5 0.7 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89008 Revision: 14-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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