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| ST110SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A FEATURES * Center gate * International standard case TO-209AC (TO-94) * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Hermetic glass-metal case with (Glass-metal seal over 1200 V) * Lead (Pb)-free * Designed and qualified for industrial level ceramic RoHS COMPLIANT insulator TO-209AC (TO-94) PRODUCT SUMMARY IT(AV) 110 A TYPICAL APPLICATIONS * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 110 TC 90 175 2700 2830 36.4 33.2 400 to 1600 100 - 40 to 125 V s C kA2s A UNITS A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST110S 08 12 16 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM IDRM/IRRM MAXIMUM AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM mA V V 400 800 1200 1600 500 900 1300 1700 20 Document Number: 94393 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST110SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 85 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 110 90 175 2700 2830 2270 Sinusoidal half wave, initial TJ = TJ maximum 2380 36.4 33.2 25.8 23.5 364 0.90 0.92 1.79 1.81 1.52 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 500 2.0 s 100 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 20 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94393 Revision: 11-Aug-08 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 180 90 40 2.9 1.8 1.2 10 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 5 1 2.0 20 5.0 150 3.0 mA V mA MAX. UNITS Vishay High Power Products W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Lubricated threads TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.195 K/W 0.08 15.5 (137) 14 (120) 130 Nm (lbf * in) g UNITS C TO-209AC (TO-94) RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.035 0.041 0.052 0.076 0.126 RECTANGULAR CONDUCTION 0.025 0.042 0.056 0.079 0.127 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94393 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST110SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 130 130 Maximum Allowable Case Temperature (C) ST110S Series RthJC (DC) = 0.195 K/W Maximum Allowable Case Temperature (C) ST110S Series RthJC (DC) = 1.95 K/W 120 120 110 Conduction Angle 110 Conduction Period 100 100 30 60 90 30 60 90 90 120 180 0 20 DC 90 120 180 120 80 0 20 40 60 80 100 Average On-state Current (A) 80 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 180 120 90 60 30 RMS Limit S R th 2 0. 3 0. W K/ 0. 4 W K/ A 0. 5 0. 6 K/ W K/ W W K/ .1 =0 K/ W e lt -D K/ W 1K /W 1.2 K/ W 0.8 a R 60 Conduction Angle 40 20 0 0 20 40 60 80 100 120 25 ST110S Series TJ = 125C 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 220 200 180 160 140 120 100 RMS Limit 80 Conduction Period DC 180 120 90 60 30 hS Rt 0. 3 K/ W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W 1.2 K/ W 0.4 2 0. A K/ W W K/ = 1 0. W K/ ta el -D R 60 40 20 0 ST110S Series TJ = 125C 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94393 Revision: 11-Aug-08 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A 2400 Peak Half Sine Wave On-state Current (A) 2200 2000 1800 1600 1400 1200 1000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Vishay High Power Products Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2800 2600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125C No Voltage Reapplied 2200 Rated V RRM Reapplied 2000 1800 1600 1400 1200 1000 0.01 ST110S Series 0.1 1 10 ST110S Series Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) 1000 100 Tj = 25C Tj = 125C ST110S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics thJC (K/W) 1 Steady State Value R thJC = 0.195 K/W (DC Operation) 0.1 Transient Thermal Impedance Z 0.01 ST110S Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Document Number: 94393 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST110SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b) Tj=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms Tj=25 C Tj=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST110S Series 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 11 2 - 0 3 S 4 16 5 P 6 0 7 V 8 PbF 9 Thyristor Essential part marking 0 = Converter grade S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 1/2"-20UNF- 2 A threads 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95078 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94393 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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