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| STA4470 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 11A RDS(ON) (m) Max 12 @ VGS=10V 16 @ VGS=4.5V PDIP-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25C TA=70C TA=25C TA=70C Limit 40 20 11 8.9 55 2.5 1.6 -55 to 150 Units V V A A A W W C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 C/W Details are subject to change without notice. Aug,18,2008 1 www.samhop.com.tw STA4470 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current b VGS= 20V , VDS=0V 1 100 uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=11A VGS=4.5V , ID=9.6A VDS=5V , ID=11A 1.0 2.0 10 12 26.5 3 12 16 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 1720 230 145 22 23 65 30 25 12 2.5 5.5 1.7 0.74 1.2 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=11A,VGS=10V VDS=20V,ID=11A,VGS=4.5V VDS=20V,ID=11A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=1.7A A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Aug,18,2008 2 www.samhop.com.tw STA4470 Ver 1.0 60 VGS=10V 15 ID, Drain Current(A) VGS=3.5V 36 VGS=3V ID, Drain Current(A) 48 VGS=4.5V 12 9 25 C 24 6 Tj=125 C 3 0 -55 C 12 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.6 1.2 1.8 2.4 3.0 3.6 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 12 10 V G S =4.5V 8 6 V G S =10V 4 2 0 1 Figure 2. Transfer Characteristics 2.2 2.0 V G S =10V ID=11A RDS(on), On-Resistance Normalized 1.8 1.6 1.4 1.2 1.0 0 0 25 50 75 100 125 150 T j ( C ) V G S =4.5V ID=9.6A RDS(on)(m ) 12 24 36 48 60 ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 ID=250uA 1.3 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 V DS =V G S ID=250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 3 Figure 6. Breakdown Voltage Variation with Temperature Aug,18,2008 www.samhop.com.tw STA4470 Ver 1.0 30 25 20.0 Is, Source-drain current(A) ID=11A 10.0 RDS(on)(m ) 20 15 10 5 0 0 2 4 6 75 C 125 C 25 C 125 C 75 C 25 C 1.0 8 10 0.2 0.4 0.6 0.8 1.0 1.2 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 2400 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 2000 C, Capacitance(pF) Ciss 8 6 4 2 0 0 V DS =20V ID=11A 1600 1200 800 Coss 400 Crss 0 0 5 10 15 20 25 30 4 8 12 16 20 24 28 32 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 600 T D(off) ID, Drain Current(A) Switching Time(ns) 100 60 Tf T D(on) Tr 10 RD ON S( )L im it 1m s 10 10 s 0m s 10 1 V G S =10V S ingle P uls e T A=25 C DC 1 1 V DS =20V ,ID=1A V G S =10V 0.1 6 10 60 100 300 600 0.05 0.1 1 10 40 70 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,18,2008 4 www.samhop.com.tw STA4470 Ver 1.0 V DD ton V IN D VG S RGE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 Single Pulse 1. 2. 3. 4. t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 Square Wave Pulse Duration(sec) Figure 15. Normalized Thermal Transient Impedance Curve Aug,18,2008 5 www.samhop.com.tw STA4470 Ver 1.0 PACKAGE OUTLINE DIMENSIONS PDIP-8 1 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27 Aug,18,2008 6 www.samhop.com.tw |
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