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STK800 N-channel 30V - 0.006 - 20A - PolarPAK(R) STripFETTM Power MOSFET Features Type STK800 VDSS 30V RDS(on) <0.0078 RDS(on)*Qg 100.5nC*m PTOT 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully encapsulated die 100% Matte tin finish (in compliance with the 2002/95/EC european directive) PolarPAK(R) is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK(R) Application Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current. Bottom View Top View Table 1. Device summary Order code STK800 Marking K800 Package PolarPAK(R) Packaging Tape & reel October 2007 Rev 9 1/16 www.st.com 16 Contents STK800 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ............................................... 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/16 STK800 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS (1) VGS(2) ID (4) ID IDM (3) PTOT (4) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 16 18 20 12.5 80 5.2 0.0416 1 -55 to 150 Unit V V V A A A W W/C J C EAS Tj (5) Single pulse avalanche energy Operating junction temperature Storage temperature Tstg 1. Continuous mode 2. Guaranteed for test time <15ms 3. Pulse width limited by package 4. When mounted on FR-4 board of 1inch2, 2 oz Cu and 10sec 5. Starting TJ = 25C, ID = 10A, VDD = 25V Table 3. Symbol Thermal data Parameter Typ. 20 1 2.8 Max. 24 1.2 3.4 Unit C/W C/W C/W Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source) 1. When mounted on FR-4 board of 1inch2, 2 oz Cu and 10sec 2. Steady state 3. Measured at source pin when the device is mounted on FR-4 board in steady state 3/16 Electrical characteristics STK800 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VGS = 16V VDS= VGS, ID = 250A VGS= 10V, ID= 10A VGS= 4.5V, ID= 10A 1 Min. 30 1 10 100 Typ. Max. Unit V A A nA V 2.5 0.006 0.0078 0.0075 0.0098 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate input resistance Test conditions Min. Typ. 1380 450 75 13.4 3.4 4.5 1 2.4 Max. Unit pF pF pF nC nC nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=15V, ID = 20A VGS =4.5V (see Figure 16) VDD=15V, ID = 12A VGS =4.5V (see Figure 21) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain RG 1 4/16 STK800 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD= 15V, ID= 10A, RG=4.7, VGS=4.5V (see Figure 15) VDD=15V, ID= 10A, RG=4.7, VGS=4.5V (see Figure 15) Min. Typ. 15 50 Max. Unit ns ns Turn-off delay time Fall time 45 15 ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 20A, VGS=0 ISD= 20A, di/dt = 100A/s, VDD=20V, Tj=150C (see Figure 20) 32 28.8 1.8 Test conditions Min. Typ. Max. 20 80 1.2 Unit A A V ns nC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/16 Electrical characteristics STK800 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/16 STK800 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/16 Electrical characteristics Figure 14. Allowable IAV vs time in avalanche STK800 The previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche 8/16 STK800 Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Test circuit Figure 21. Gate charge waveform STK800 Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd 10/16 STK800 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STK800 Table 8. Ref. PolarPAK(R) (option "S") mechanical data mm Min. Typ. 0.80 Max. 0.85 0.05 0.48 0.41 2.19 0.89 0.23 0.20 6 5.74 5.01 4.75 0.23 0.45 0.31 0.45 1.92 0.38 4.22 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0.18 0 10 0.36 12 0 0.20 3.64 0.76 0.25 4.10 0.95 4.50 3.58 4.70 3.73 1.97 0.43 4.37 0.41 0.56 0.51 0.56 2.02 0.48 4.52 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.075 0.014 0.166 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.154 0.007 10 0.014 12 0.008 0.143 0.030 0.010 0.161 0.037 0.177 0.141 0.185 0.147 0.077 0.016 0.172 0.016 0.022 0.020 0.022 0.079 0.018 0.178 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 Min. 0.030 inch Typ. 0.031 Max. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 I1 J1 K1 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 < 0.75 12/16 STK800 Package mechanical data Figure 22. PolarPAK(R) (option "S") drawings 13/16 Package mechanical data Figure 23. Recommended PAD layout STK800 14/16 STK800 Revision history 5 Revision history Table 9. Date 10-Nov-2005 02-Feb-2006 21-Mar-2006 25-May-2006 14-Nov-2006 14-May-2007 11-Jun-2007 03-Sep-2007 05-Oct-2007 Document revision history Revision 1 2 3 4 5 6 7 8 9 First version Complete version The document has been reformatted New note on page 1 Modified : Features New data on Table 5 and new Figure 21 Updated Figure 2, Figure 3 Updated mechancal data Inserted new Figure 23: Recommended PAD layout Changes 15/16 STK800 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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